Conference Proceeding

Back-end induced IMO layer charging

Taiwan Semicond. Manuf. Co., Hsin-Chu
07/1991; DOI:10.1109/VMIC.1991.153053 ISBN: 0-87942-673-X pp.451 - 453 In proceeding of: VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Source: IEEE Xplore

ABSTRACT Field Inversion generated in a CMOS double metal process due to
the back-end process was studied. Generated positive charges were
related to reaction between PETEOS and noncarbon based SOG during
alloying. Replacing PETEOS with Si-rich PETEOS or PEOXIDE eliminated the
charging problems and improved yield

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Keywords

CMOS double metal process
 
Field Inversion
 
Generated positive charges
 
noncarbon
 
PEOXIDE
 
Replacing PETEOS
 

L.M. Liu