Article

An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique

Nat. Chung Cheng Univ., Chiayi
IEEE Microwave and Wireless Components Letters (impact factor: 1.72). 08/2007; DOI:10.1109/LMWC.2007.899317 pp.525 - 527
Source: IEEE Xplore

ABSTRACT An internally-matched single-pole double-throw (SPDT) switch with high isolation is presented. The high isolation is resulted from the leakage cancellation by employing a compensation circuit, which also achieves impedance match for all ports. The SPDT chip, implemented in a 0.18-mum CMOS process, achieves a measured isolation of 72 dB, an insertion loss of 1.1 dB, return losses better than 10 dB at all ports and PidB of 19.3 dBm at 1.9 GHz.

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Keywords

achieves impedance match
 
compensation circuit
 
GHz
 
insertion loss
 
internally-matched single-pole double-throw
 
leakage cancellation
 
measured isolation
 
return losses
 
SPDT chip
 

Shuen-Chien Chang