Article

Slow carrier-phonon interaction in InGaAs-InGaAsP multiquantum well investigated by time-development of carrier temperature and gain

Opto-Electron. Res. Labs., NEC Corp., Ibaraki
IEEE Journal of Selected Topics in Quantum Electronics (impact factor: 3.78). 07/1995; DOI:10.1109/2944.401210 pp.308 - 315
Source: IEEE Xplore

ABSTRACT Carrier temperature and gain transients were measured, on a
picosecond time scale, for a 1.5 μm-band multiquantum-well (MQW)
semiconductor laser (LD) amplifier. The transients were analyzed using
extended rate equations, which deal with carrier-longitudinal optical
(LO) phonon interaction, and carrier excitation due to Auger
recombination. Carrier-LO phonon interaction was found to be extremely
slow at high carrier density. For the electron intrasubband scattering,
the time constant was estimated to be 7 ps, which was one order of
magnitude larger than the calculated value even if the Coulomb screening
was taken into account. Auger-excited carrier was found to mainly
overflow and to have a minor effect on the carrier temperature. On the
basis of these conclusions, light output saturation in the MQW-LD is
discussed

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Keywords

Auger-excited carrier
 
carrier density
 
carrier excitation
 
Carrier temperature
 
Carrier-LO phonon interaction
 
Coulomb screening
 
electron intrasubband scattering
 
gain transients
 
light output saturation
 
magnitude larger
 
minor effect
 
MQW-LD
 
overflow
 
picosecond time scale
 
rate equations
 
semiconductor laser
 

M. Nido