Very low threshold current density 1.29 μm GaInNAs triple quantum well lasers grown by MBE

Chalmers Univ. of Technol., Goteborg
Electronics Letters (Impact Factor: 1.07). 02/2008; DOI: 10.1049/el:20080207
Source: IEEE Xplore

ABSTRACT Very low threshold Ga0.62In0.38N0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29 mum are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As- cleaved broad area lasers with a cavity length of 1 mm showed a record low threshold current density of 400 A/cm2 (~130 A/cm2 / QW), a high differential efficiency of 0.32 W/A/facet and a characteristic temperature of 94 K in the temperature range 10 to 110degC.

  • [Show abstract] [Hide abstract]
    ABSTRACT: In this paper, the temperature behaviors of photoluminescence (PL) spectra of as-grown and annealed InGaASN/GaAs single quantum-well (SQW) samples with different nitrogen levels have been investigated by means of the localized-state ensemble (LSE) model. The variations of PL peak position and linewidth versus temperature are attributed to the creation of a fluctuation potential in the band edge of the host material from the nonuniform distribution of nitrogen in the structure. The anomalous thermal behaviors have been investigated by using the LSE model and a good agreement between experimental and theoretical results has been observed, especially at low temperature. The LSE model predicts a reduction of the localized states in rapid thermal annealed (RTA) samples compared to the as-grown state.
    physica status solidi (b) 10/2009; 247(1):170 - 175. · 1.61 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: The effects of non-uniform compositions (the composition disorders) of indium and nitrogen, in a Ga0.59In0.41N0.038As0.962/GaAs single-quantum well (QW) along the growth direction, on the QW's band structure and further on its optical gain spectrum have been studied theoretically. The 10-band k{\cdot}p model and the many-body optical gain model have been employed, respectively, to calculate the band structure and the optical gain of the QW. The subband energy dispersions, the optical gains of the transverse electric (TE) and transverse magnetic (TM) modes, and the radiative current densities have been investigated. The composition disorders lead to blueshift in carrier's transition energy, which is mainly due to indium composition disorder while nitrogen composition disorder only plays minor role. The TM mode optical gain is significantly enhanced and the threshold current density is increased in the composition disordered QW structure. These results may provide important supports in the design and fabrications of GaInNAs/GaAs QW based optoelectronic devices.
    Japanese Journal of Applied Physics 08/2009; 48. · 1.06 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71μm at 300K. High quality 1.3μm GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100x1000μm2) is 300, 300, 400 and 940A/cm2 for single, double, triple and quadruple QW lasers, respectively. The maximum 3dB bandwidth reaches 17GHz and high-speed transmission at 10Gb/s up to 110°C under a constant voltage has been demonstrated.
    Microelectronics Journal 03/2009; 40(3):386-391. · 0.91 Impact Factor