Article

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

UMR-CNRS, Villeneuve d'Ascq, France
Electronics Letters (impact factor: 0.96). 02/2005; DOI:10.1049/el:20056735 pp.46 - 47
Source: IEEE Xplore

ABSTRACT The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the same power density. This study demonstrates that GaN devices are ideal candidates for applications requiring high power and high linearity behaviours simultaneously.

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Keywords

corresponding intermodulation ratio
 
drain-source bias voltages
 
GaAs substrates
 
GaN devices
 
output power densities
 
power density
 
sapphire substrates
 
usual PHEMT devices