Al0.3Ga0.7N/GaN high electron mobility
transistor (HEMT) structures have been grown on resistive Si(111)
substrate by molecular beam epitaxy (MBE) using ammonia
(NH3). The use of an AlN/GaN intermediate layer allows a
resistive buffer layer to be obtained. High sheet carrier density and
high electron mobility arc obtained in the channel. A device with 0.5
μm gate length has been realised exhibiting a maximum extrinsic
transconductance of 160 mS/mm and drain-source current exceeding 600
mA/mm. Small-signal measurements show ft of 17 GHz and
fmax of 40 GHz
[Show abstract][Hide abstract] ABSTRACT: The large signal characteristics of 1 Pm long S-gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed.The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively.High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz .Large signal gain and power density values of 16 dBand 1.7 W/mm for a two-finger 1x75 Pm 2 HEMT respectively were observed at 5 GHz.The device also exhibited PAE values as high as 40%with P1dB around +2.0 dBm for Class AB operation.
[Show abstract][Hide abstract] ABSTRACT: In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.
[Show abstract][Hide abstract] ABSTRACT: In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high frequency performances of submicron gate length devices are analysed demonstrating their RF power capability.
physica status solidi (c) 01/2003; DOI:10.1002/pssc.200390117
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