AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
French National Centre for Scientific Research, Lutetia Parisorum, Île-de-France, France Electronics Letters
(Impact Factor: 0.93).
02/2002; 38(2):91 - 92. DOI: 10.1049/el:20020060
Al0.3Ga0.7N/GaN high electron mobility
transistor (HEMT) structures have been grown on resistive Si(111)
substrate by molecular beam epitaxy (MBE) using ammonia
(NH3). The use of an AlN/GaN intermediate layer allows a
resistive buffer layer to be obtained. High sheet carrier density and
high electron mobility arc obtained in the channel. A device with 0.5
μm gate length has been realised exhibiting a maximum extrinsic
transconductance of 160 mS/mm and drain-source current exceeding 600
mA/mm. Small-signal measurements show ft of 17 GHz and
fmax of 40 GHz
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