Article

Electrical effects of SiNx deposition on GaN MESFETs

CNRS, Villeneuve
Electronics Letters (Impact Factor: 1.07). 05/2001; 37(8):527 - 528. DOI: 10.1049/el:20010324
Source: IEEE Xplore

ABSTRACT The electrical effects of SiNx deposition on GaN
MESFETs have been investigated. Significant effects induced from the
dielectric coating have been observed depending on the deposition
temperature used in the technological process. A power density increase
of 30% has been observed after the device passivation performed at
200°C

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