Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
Electronics Letters (Impact Factor: 1.07). 12/1998; 34(24):2356 - 2357. DOI: 10.1049/el:19981616
Source: IEEE Xplore

ABSTRACT Interface state generation effects due to hot carrier phenomena
are studied in n-channel undoped hydrogenated polysilicon thin-film
transistors under on-current bias-stress conditions. At the initial
stages of stressing, interface states are created as well as hot hole
trapping. As the stress process proceeds further, a saturation of the
density of generated interface states was found after which hot electron
injection into the gate oxide becomes the most important factor in
further device degradation

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