Article

Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch

Sensoi Syst. Eng. Dept., Toshiba Corp., Kawasaki, Japan
IEE Proceedings - Circuits Devices and Systems (Impact Factor: 0.36). 05/2003; DOI: 10.1049/ip-cds:20030335
Source: IEEE Xplore

ABSTRACT The paper describes a method for the estimation of the equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch. A GaAs PIN diode with low insertion loss over the millimetre-wave region is presented. The diode has been developed by estimating the parasitic resistance of the space between the P+-layer and the N+-electrode. The design and performance of a broadband single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch using the GaAs PIN diode developed are also described. An insertion loss of 1.0 dB and isolation of 20 dB were obtained in the range DC to 50 GHz.

0 Bookmarks
 · 
67 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: A single-pole single-throw switch constituting the transparent path in a reconfigurable switch matrix is presented, improving the availability of the switch matrix in case of an on-board power-fail. The design of the switch is based on the traveling-wave concept using packaged PIN-diodes on a thick-film ceramic substrate under the constraints on the number of PIN-diodes and power dissipation. The circuit design and analysis of the switch based on the concept of an artificial transmissionline are described. Unlike the traditional low-pass characteristics inherent to traveling-wave switches, high isolation is achieved by transforming the parasites of the PIN-diodes in the shunt arms to reveal band-pass characteristics besides assisting the assembly of the package. On-wafer measurements reveal an isolation ≥ 45 dB and an insertion loss ≤ 6 dB in the Ka-band downlink frequencies (17…22 GHz).
    Electrical Performance of Electronic Packaging and Systems (EPEPS), 2013 IEEE 22nd Conference on; 01/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this paper, a W-band single pole single throw (SPST) switch based on an accurate PIN diode model is presented. The beam lead PIN diodes are modeled using a full-wave electromagnetic (EM) simulator and connected in parallel with unilateral finline. Measurement results show that the SPST has wide band characteristics. By contrasting the simulation and measurement results, the accurate impedance of the diode at W-band are obtained.
    Computational Problem-Solving (ICCP), 2012 International Conference on; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the ‘on’ state from 88GHz to 98GHz. Isolation greater than 30dB over 2GHz bandwidth and greater than 20dB over 5GHz bandwidth can be achieved at the center frequency of 94GHz under the ‘off’ state. KeywordsEM Simulation–PIN diode–Switch–W-band
    Journal of infrared, millimeter and terahertz waves 12/2011; 32(12):1434-1445. · 1.89 Impact Factor