Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch

Sensoi Syst. Eng. Dept., Toshiba Corp., Kawasaki, Japan
IEE Proceedings - Circuits Devices and Systems (Impact Factor: 0.52). 05/2003; 150(2):92 - 94. DOI: 10.1049/ip-cds:20030335
Source: IEEE Xplore

ABSTRACT The paper describes a method for the estimation of the equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch. A GaAs PIN diode with low insertion loss over the millimetre-wave region is presented. The diode has been developed by estimating the parasitic resistance of the space between the P+-layer and the N+-electrode. The design and performance of a broadband single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch using the GaAs PIN diode developed are also described. An insertion loss of 1.0 dB and isolation of 20 dB were obtained in the range DC to 50 GHz.

    • "PIN diodes are used in high voltage rectifiers, RF switches and attenuators and even in photo detectors. The usage of a single vari antenna in both transmitter and receiver, phase array radars, variable gain RF amplifiers (VGAS) and single pole single throw (SPST) or single pole double throw (SPDT) switching circuits and frequency-up converters (modulators) and frequency-down converters (mixers) can be shown as good examples of RF applications of PIN diode ([4] [5] [6] [7] [8],[10]). Figure 2 shows operating principal of PIN diode. "
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