Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch
Sensoi Syst. Eng. Dept., Toshiba Corp., Kawasaki, JapanIEE Proceedings - Circuits Devices and Systems (Impact Factor: 0.52). 05/2003; 150(2):92 - 94. DOI: 10.1049/ip-cds:20030335
Source: IEEE Xplore
The paper describes a method for the estimation of the equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch. A GaAs PIN diode with low insertion loss over the millimetre-wave region is presented. The diode has been developed by estimating the parasitic resistance of the space between the P+-layer and the N+-electrode. The design and performance of a broadband single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch using the GaAs PIN diode developed are also described. An insertion loss of 1.0 dB and isolation of 20 dB were obtained in the range DC to 50 GHz.
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- "PIN diodes are used in high voltage rectifiers, RF switches and attenuators and even in photo detectors. The usage of a single vari antenna in both transmitter and receiver, phase array radars, variable gain RF amplifiers (VGAS) and single pole single throw (SPST) or single pole double throw (SPDT) switching circuits and frequency-up converters (modulators) and frequency-down converters (mixers) can be shown as good examples of RF applications of PIN diode (    ,). Figure 2 shows operating principal of PIN diode. "
ABSTRACT: The PIN diode is a semiconductor device that can, for its especial properties , be used to switch high level power and frequencies currents. The main aim of this paper is to introduce, investigate and explore a new structure for high voltage, high frequency and high power multilayer pin diode with an improved cutoff frequency that also has high sensitive variable junction capacitance versus changes in input bias voltage. To design, simulate and analyze the novel structure in the range of 1 GHz to 31 GHz, Silvaco Atlas software is used. The results show that in 1GHz frequency, junction capacitance value shows a considerable increase of about 2.875e-17 F/µm in a bias range of-10V to 10V that 80 percent of this increase occurs in of range of 0-2 V which is very considerable. For the 31-GHz frequency also, junction capacitance value shows an increase of about 1.625e-17 F/µm by applying the same range of input bias voltage , exhibiting an acceptable increase given the high frequency used. In frequencies between 1GHz to 31 GHz also, there is a considerable increase rate for junction capacitance value relative to the same range of bias voltage. Usage of this novel structure in frequency-down converters (e.g. mixers) is one of its practical implications. After estimating the equivalent circuit for novel structure, considering a diode's frequency response, its cutoff frequency was calculated to be 8.8 MHz. Keywords: RF high voltage high power multilayer Pin diode, silvaco, cutoff frequency, halo, packed heavily doped region, sharp variable capacitor, high gradient E-field, Switching speed characteristic, on-state resistance, forward voltage drop, softness factory
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ABSTRACT: This work presents an equivalent circuit model for a PIN diode to be used with finite element electromag-netic simulations in time domain. The proposed model in-cludes low and high frequency behaviors. The parameters of a commercial PIN diode are extracted from measurements and a single pole single through switch is constructed. The obtained results show the consistence and applicability of the proposed model.
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ABSTRACT: In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the ‘on’ state from 88GHz to 98GHz. Isolation greater than 30dB over 2GHz bandwidth and greater than 20dB over 5GHz bandwidth can be achieved at the center frequency of 94GHz under the ‘off’ state. KeywordsEM Simulation–PIN diode–Switch–W-bandJournal of infrared, millimeter and terahertz waves 12/2011; 32(12):1434-1445. DOI:10.1007/s10762-011-9841-2 · 1.94 Impact Factor
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