Article

Repetitive and High Voltage Marx Generator Using Solid-state Devices

Huazhong Univ. of Sci. & Technol., Wuhan
IEEE Transactions on Dielectrics and Electrical Insulation (Impact Factor: 1.36). 09/2007; DOI: 10.1109/TDEI.2007.4286529
Source: IEEE Xplore

ABSTRACT Repetitive high voltage pulsed power system proposed in this study originates from conventional Marx generators. This newly developed Marx modulator employs high voltage (HV) insulated gate bipolar transistors (IGBT) as switches and series- connected diodes as isolated components. Self-supplied IGBT drivers and optic signals are used in the system to avoid insulation problem. Experimental results of 20 stages generating pulses with 60 kV, 20-100 mus and 50~500 Hz are presented to validate the performance of the system in the paper.

0 Bookmarks
 · 
168 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper presents the design for a novel all solid-state sub-microsecond pulse generator for dielectric barrier discharges (DBDs). This generator consists of a MARX generator, Blumlein transmission lines (BTLs) and one magnetic switch (MS). As a power supply, the all solid-state MARX generator is capable of outputting nanosecond-pulses with a voltage peak of up to 20 KV. The key elements are BTLs which are charged by the MARX generator. Due to the unmatched impedance of DBD load, energy stored in BTLs begins to oscillate through DBD load after the MS turns on. The violent oscillation lasts until all the energy is consumed. During the violent oscillation, over ten discharges are excited in 5 μs under a single-shot condition. Thus, extremely intense plasma can be produced due to the accumulation effect. The alternating-current decaying voltage over the MS has a demagnetization effect, and DC reset circuit can therefore be spared. Experiments with matched resistor load were also carried out, and rectangular pulses with voltage up to 20 kV and duration of 220 ns were obtained. The ratio of the energy consumed by the resistor from the energy stored in the BTLs is 84.9%. The DBD images under a single shot and 100 Hz are presented.
    IEEE Transactions on Plasma Science 03/2013; 41(3):564-569. · 0.87 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: This paper presents a new method to increase the magnitude of impulse square wave of Pulse Forming Grid (PFN) and capability of producing the repetitive impulse waves by temporary converting it to Boost Converter (BC). For achieving to this goal the PFN inductors and capacitors are connected in series and parallel respectively using solid state switches and during this procedure the PFN impulse generator converts to BC and increases the voltage of capacitors uniformly to the considerable value. This technique causes to increase the discharging voltage level to the load many times more than its DC voltage source without using additional converter or transformer. The yielding results from numeric simulations in MATLAB prove this technique.
    IEEE Transactions on Dielectrics and Electrical Insulation 04/2013; 20(2):462. · 1.36 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this paper, we present a solid state 0–120 kV microsecond pulse charger for our nanosecond pulse generator . The pulse-forming line (PFL) of our nanosecond pulse generator must be charged with microsecond pulses to prevent pre-firing of its oil spark gap. The pulse charger consists of two identical compact pulse charger modules with integrated electronics. The electronic circuits are mounted on a compact printed circuit board and consist mainly of a number of parallel connected insulated-gate bipolar transistors (IGBTs) that switch a primary capacitor bank into a pulse transformer. Each pulse charger module can generate 60 kV microsecond pulses at 1 kHz repetition rate. When connected in series, they are able to deliver up to 120 kV into a 100 pF load. This 100 pF load is the PFL of our nanosecond pulse generator at its maximum length of 1 m. The pulse charger is able to operate in a harsh electromagnetic interference environment as a result of its compact layout and optical triggering of the IGBTs.
    IEEE Transactions on Plasma Science 01/2013; 41(12):3666-3674. · 0.87 Impact Factor