Repetitive and High Voltage Marx Generator Using Solid-state Devices
ABSTRACT Repetitive high voltage pulsed power system proposed in this study originates from conventional Marx generators. This newly developed Marx modulator employs high voltage (HV) insulated gate bipolar transistors (IGBT) as switches and series- connected diodes as isolated components. Self-supplied IGBT drivers and optic signals are used in the system to avoid insulation problem. Experimental results of 20 stages generating pulses with 60 kV, 20-100 mus and 50~500 Hz are presented to validate the performance of the system in the paper.
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ABSTRACT: After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction, and chemically inert phases and coatings, e.g., for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes use of PBII and PBIID to alter surfaces of or produce coatings on surgical implants and other biomedical devices. With limitations, also nonconducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few electron volts up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process nonflat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.IEEE Transactions on Plasma Science 01/2006; · 0.87 Impact Factor
Conference Proceeding: High voltage pulse power supply using Marx generator & solid-state switches[show abstract] [hide abstract]
ABSTRACT: High voltage pulse power supply using Marx generator and solid-state switches is proposed in this study. The Marx generator is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. To charge the capacitors of each stage in parallel, inductive charging method is used and this method results in high efficiency and high repetition rates. It can generate the pulse voltage with the following parameters: voltage: up to 120 kV, rising time: sub μS, pulse width: up to 10 μS, pulse repetition rate: 1000 pps. The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental results are included to verify the system performances in this paper.Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE; 12/2005
Conference Proceeding: Gate drive methods for IGBTs in bridge configurations[show abstract] [hide abstract]
ABSTRACT: The insulated gate bipolar transistor (IGBT) combines the advantages of both MOS and bipolar transistor technologies into a near-ideal power semiconductor switch. Of the various application areas, the use of IGBTs in the half or full-bridge power convertor configuration is very common. Such applications have typical requirements like isolated drivers, high dv/dt stress withstand, protection against shoot-through fault, etc. This paper presents various types of gate drive circuits suitable for such situations and their relative performance under actual circuit conditions. This includes pulse-transformer circuits (where a secondary power supply is not required) for PWM control, as well as opto-isolator circuits where the secondary power supply may be derived from the inverter DC bus. Protection schemes for the IGBT that can be incorporated into the drive circuit are also discussedIndustry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE; 11/1994