Article

Repetitive and High Voltage Marx Generator Using Solid-state Devices

Huazhong Univ. of Sci. & Technol., Wuhan
IEEE Transactions on Dielectrics and Electrical Insulation (Impact Factor: 1.23). 09/2007; DOI: 10.1109/TDEI.2007.4286529
Source: IEEE Xplore

ABSTRACT Repetitive high voltage pulsed power system proposed in this study originates from conventional Marx generators. This newly developed Marx modulator employs high voltage (HV) insulated gate bipolar transistors (IGBT) as switches and series- connected diodes as isolated components. Self-supplied IGBT drivers and optic signals are used in the system to avoid insulation problem. Experimental results of 20 stages generating pulses with 60 kV, 20-100 mus and 50~500 Hz are presented to validate the performance of the system in the paper.

0 Bookmarks
 · 
203 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: Along with rapid advancement of power semiconductors, voltage multipliers have introduced new series of pulsed power generators. In this paper, current topologies of capacitor-diode voltage multipliers (CDVM) are investigated. Alternative structures for voltage multiplier based on power electronics switches are presented in high voltage pulsed power supplies application. The new topology is able to generate the desired high voltage output without increasing the voltage rating of semiconductor devices as well as capacitors. Finally, a comparative analysis is carried out between different CDVM topologies. Experimental and simulation results are presented to verify the analysis.
    Power Electronics and Motion Control Conference (EPE/PEMC), 2012 15th International; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: In many pulsed power applications, high voltage and high frequency square pulses are needed. Traditional Marx type modulators based on solid-state switches often couldn't meet the requirements, especially on frequency and waveform. To solve the problems, a noval solid-state pulsed power modulator based on charging and driving by magnetic ring transformers is introduced in this paper. In order to obtain pulses with steep voltage edges on various kinds of loads, half bridges formed by MOSFET switches are used in the modulator. The usage of magnetic rings makes the stray capacitance become one of the most important aspects to distort the output voltage waveforms. The effect of stray parameters on output waveforms is analysed in detail by the experiments in this paper. According to the analysis, this paper deals with a design of the pulsed power modulator with isolated recharge for dielectric barrier discharge (DBD) research, In order to design much more suitable pulse modulators, some methods are described to reduce the influence of the stray parameters.
    Power Modulator and High Voltage Conference (IPMHVC), 2012 IEEE International; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this work, a behavioral model for MOS Controlled-Thyristor (MCT) surge current analysis is proposed together with a design criterion. In this model, the relationships between the surge current characteristics including peak current (Ipeak) and high current rising rate (di/dt) of MCT and the device resistance (R) have been discussed, and then a readily measurable parameter, critical resistance (Rc), is presented to estimate the device surge current capability. According to the analytical results, both Ipeak and di/dt of MCT have been found to remain approximately constant with increasing resistance unless its resistance approaches and exceeds this Rc. It is therefore referred to as a design criterion for guiding the device design. The accuracy of the developed model and criterion are verified by comparing the obtained results with those resulting from simulation and experiment results.
    Solid-State Electronics 09/2014; 99:31–37. · 1.51 Impact Factor