InAs–InP (1.55- μm Region) Quantum-Dot Microring Lasers

Eindhoven Univ. of Technol., Eindhoven
IEEE Photonics Technology Letters (Impact Factor: 2.04). 04/2008; DOI: 10.1109/LPT.2008.916963
Source: IEEE Xplore

ABSTRACT In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.

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    ABSTRACT: The relation between the structural parameters and the operating characteristics of microring lasers is examined through theoretical estimations, waveguiding simulations, and experimental measurements. The effects of ring radius, waveguide profile, and overall geometry on the coupling efficiency and subsequently on threshold and spectral characteristics are thoroughly investigated. Coupling efficiency is calculated through 3-D finite difference in time domain methods. Fabricated devices consist of active microrings integrated with passive bus waveguides using wafer bonding techniques.
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    ABSTRACT: After the general aspects of InAs/InP (100) quantum dots (QDs) regarding the formation of QDs versus quantum dashes, wavelength tuning from telecom to mid-infrared region, and device applications, we discuss our recent progress on the lateral ordering, position, and number control of QDs. Single-layer and stacked linear InAs QD arrays are formed by self-organized anisotropic strain engineering of an InAs/InGaAsP superlattice template on InP (100) with emission wavelength at room temperature in the important 1.55-??m telecom wavelength region. Guided and directed self-organized anisotropic strain engineering is demonstrated on shallow- and deep-patterned GaAs (311)B for the formation of complex InGaAs QD arrays and absolute QD position control. The lateral position, distribution, and number control of InAs QDs, down to a single QD, are demonstrated on truncated InP (100) pyramids by selective-area growth with sharp emission at 1.55 ??m. Submicrometer-scale active-passive integration is established by the lateral regrowth of InP around the pyramids for planarization. Such control over QD formation is the key to future quantum functional nanophotonic devices and integrated circuits operating at the single- and multiple-electron and photon level with controlled interactions.
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    ABSTRACT: The phase and intensity noise of microring lasers coupled with passive waveguides are examined through linewidth and relative intensity noise measurements. Laser linewidth down to 500 KHz was measured through the self-homodyne technique and a direct association is established between the linewidth and the two main structural parameters of a microring, the ring radius and coupling efficiency with the bus waveguide. Coupling efficiency is estimated through waveguiding analysis by means of 3-D finite difference in time domain techniques.
    IEEE Journal of Quantum Electronics 03/2012; · 2.11 Impact Factor


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Jun 4, 2014