1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs

EnviroScopY SA Switzerland, Vaud, Switzerland
IEEE Photonics Technology Letters (Impact Factor: 2.18). 06/2004; 16(5):1230 - 1232. DOI: 10.1109/LPT.2004.826099
Source: IEEE Xplore

ABSTRACT We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9°. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70°C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.