1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs
ABSTRACT We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9°. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70°C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.
Conference Proceeding: Efficient optoelectronic de-embedding for VCSEL intrinsic response extraction[show abstract] [hide abstract]
ABSTRACT: In this present work, we propose a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic transmission behavior. It has been observed that the S<sub>11</sub> reflection coefficient of the chip is only due to the electrical access to the chip composed by the transmission line and cavity contacts. This allows us to decompose the chip into two cascaded subsystems representing the electrical access and the optical cavity respectively. An equivalent electrical circuit is developed for the electrical access behavior and, combined with the transfer matrix formalism, it becomes possible to remove the parasitics contribution from the measured S<sub>21</sub> response. In this way, the intrinsic 3-dB bandwidth of the VCSEL can be determined.Microwave Photonics, 2009. MWP '09. International Topical Meeting on; 11/2009