Article
1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs
BeamExpress S.A., Lausanne, Switzerland
IEEE Photonics Technology Letters (impact factor:
2.19).
06/2004;
DOI:10.1109/LPT.2004.826099
pp.1230 - 1232
Source: IEEE Xplore
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Citations (0)
- Cited In (1)
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Conference Proceeding: Efficient optoelectronic de-embedding for VCSEL intrinsic response extraction
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ABSTRACT: In this present work, we propose a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic transmission behavior. It has been observed that the S<sub>11</sub> reflection coefficient of the chip is only due to the electrical access to the chip composed by the transmission line and cavity contacts. This allows us to decompose the chip into two cascaded subsystems representing the electrical access and the optical cavity respectively. An equivalent electrical circuit is developed for the electrical access behavior and, combined with the transfer matrix formalism, it becomes possible to remove the parasitics contribution from the measured S<sub>21</sub> response. In this way, the intrinsic 3-dB bandwidth of the VCSEL can be determined.Microwave Photonics, 2009. MWP '09. International Topical Meeting on; 11/2009
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Keywords
1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers
active cavity material
emitting 0.2 mW
multiple-wavelength VCSEL arrays
room temperature
wavelength span