1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs
ABSTRACT We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9°. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70°C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.
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ABSTRACT: We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.IEEE Photonics Technology Letters 09/2002; · 2.04 Impact Factor
Conference Proceeding: High temperature continuous-wave operation of 1.3-1.55 μm VCSELs with InP/air-gap DBRs[show abstract] [hide abstract]
ABSTRACT: High temperature CW operation of electrically pumped 1.3-1.55 μm MQW VCSELs using top and bottom InP/air-gap DBRs with record low threshold current density is demonstrated.Semiconductor Laser Conference, 2002. IEEE 18th International; 02/2002