1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs

EnviroScopY SA Switzerland, Vaud, Switzerland
IEEE Photonics Technology Letters (Impact Factor: 2.11). 06/2004; 16(5):1230 - 1232. DOI: 10.1109/LPT.2004.826099
Source: IEEE Xplore


We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9°. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70°C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.

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    • "In order to overcome this problem either wafer-fusing onto GaAs/AlGaAs is employed, or some esoteric dielectric mirror pairs are used as reflectors. The former option has long term reliability issues while the latter necessitates the complex and expensive fabrication processes [5] [6]. "
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    • "To further increase the 3-dB bandwidth of S21 response, larger D-factor is desirable, which can be achieved by reducing the aperture size, fine tuning the HCG reflectivity, and increasing the strain in quantum wells. Given that HCG is just a replacement of the reflectors compared to DBR VCSELS, HCG- VCSELs should have the same high-speed modulation potential as other DBR VCSELs [4]–[6], yet further improvement of design and process is needed to extend the bandwidth. Fig. 13 shows the eye diagrams and BER curves of a direct On–Off-key (OOK) modulated TE-HCG-VCSEL. "
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