Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

Lincoln Lab., MIT, Lexington, MA, USA
IEEE Photonics Technology Letters (Impact Factor: 2.18). 12/1996; 8(11):1429 - 1431. DOI: 10.1109/68.541539
Source: IEEE Xplore

ABSTRACT Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.

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