Article

Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

Lincoln Lab., MIT, Lexington, MA, USA
IEEE Photonics Technology Letters (Impact Factor: 2.04). 12/1996; DOI: 10.1109/68.541539
Source: IEEE Xplore

ABSTRACT Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.

0 Bookmarks
 · 
55 Views
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: The wavelength stabilization of high-brightness extended-cavity lasers at 810-nm by the use of volume Bragg gratings is described. Narrow linewidth (< 20pm), high power (2.5W) and good beam quality (M2<4) operation has been obtained in a robust and simple design. The impact of the beam focusing into the Bragg grating on the external cavity performance has been theoretically and experimentally investigated. Finally, second-harmonic generation of the infrared beam has been obtained in a ppKTP crystal, demonstrating a non-linear conversion efficiency of 0.8%/W and up to 8mW at 405nm.
    Applied Physics B 01/2006; 91(3):493-498. · 1.78 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Adiabatically flared slab-coupled optical waveguide lasers (SCOWLs) at 1.06 μm wavelength have been studied, achieving a large fundamental mode and a 32% increase in COD power. Capabilities and limitations of the taper mechanism are discussed.
    Photonics Conference (IPC), 2012 IEEE; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: The basic concepts and some modelling aspects of high-brightness semiconductor lasers are reviewed. The technology of lasers with a tapered gain-region is described. They provide the highest brightness of a semiconductor source with continuous wave emission in the visible and near infrared spectral range. Experimental results are presented for tapered lasers emitting at 735 nm and 808 nm. Output powers of 3 W were achieved in nearly diffraction limited beams. To cite this article: H. Wenzel et al., C. R. Physique 4 (2003).RésuméLes concepts de base et certains aspects de la modélisation des lasers semiconducteurs de haute luminance sont passés en revue. La technologie des lasers comportant une section amplificatrice évasée est décrite. Ils constituent les sources semiconductrices émettant en continu ayant la plus forte luminance dans le domaine spectral visible et proche infrarouge. Des résultats expérimentaux sont présentés pour des lasers évasés émettant à 735 nm et à 808 nm. Des puissances de 3 W ont été obtenues avec des faisceaux presque limités par la diffraction. Pour citer cet article : H. Wenzel et al., C. R. Physique 4 (2003).
    Comptes Rendus Physique 01/2003; 4(6):649–661. · 1.82 Impact Factor