Article

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

Inst. of Microelectron., Singapore, Singapore
IEEE Electron Device Letters (impact factor: 2.85). 08/2006; DOI:10.1109/LED.2006.876301 pp.538 - 541
Source: IEEE Xplore

ABSTRACT This letter reports on a device layer transfer (based on thermal bonding and grinding backside Si) process and device characteristics of Si MOSFETs on a flexible substrate, focusing mainly on the mechanical bendability of the device and resistance to fatigue. The results demonstrated a well-optimized bonding process, as indicated by the nearly indiscernible performance difference (e.g., subthreshold slope, Vth, and Idsat) before and after the bonding of Si with the flexible substrate. The device characteristics indicate excellent bendability of Si MOSFETs on flexible substrate (e.g., for radius tested down to ±72 mm) and good immunity to fatigue (e.g., negligible performance drift tested up to ∼103 bending cycles with a radius of ±126 mm). Results suggest the feasibility of this approach in achieving high-performance MOSFETs for applications in performance-sensitive and flexible electronics.

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Keywords

applications
 
device characteristics
 
device layer transfer
 
fatigue
 
flexible electronics
 
flexible substrate
 
good immunity
 
high-performance MOSFETs
 
indiscernible performance difference
 
letter reports
 
mechanical bendability
 
negligible performance drift
 
Si MOSFETs
 
subthreshold slope
 

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