Low-frequency noise measurement and analysis in organic light-emitting diodes

Inst. of Mater. Res. & Eng., Singapore, Singapore
IEEE Electron Device Letters (Impact Factor: 2.79). 08/2006; DOI: 10.1109/LED.2006.877283
Source: IEEE Xplore

ABSTRACT Low-frequency noise characteristics of organic light-emitting diodes are investigated. Two noise components were found in experimental low-frequency noise records, namely: 1) 1/f Gaussian noise from device bulk materials and 2) an excessive frequency-related part of noise related to device interfaces or defects and traps. 1/f noise is said to be related to carrier mobility. Degradation, especially photo-oxidation of the electroluminescence polymer, is a possible reason that affects carrier mobility. The excessive part of noise is believed to be related to the carrier numbers and could come from the interface deterioration, defects and traps generation and furnish. The excessive part of noise increases much faster during device stress. This shows that the degradation related interface defects and traps is much faster.

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