Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

Res. Div., IBM Semicond. R&D Center, Yorktown Heights, NY, USA
IEEE Electron Device Letters (Impact Factor: 2.79). 06/2003; DOI:10.1109/LED.2003.812565
Source: IEEE Xplore

ABSTRACT Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness less than 3 nm. Hole mobility enhancement of /spl ges/160% has been observed for both oxynitride and HfO/sub 2/ gate dielectrics on [110] surfaces compared with [100]. CMOS drive current is nearly symmetric on [110] orientation without any degradation of subthreshold slope. For HfO/sub 2/ gate dielectrics, an approximately 68% enhancement of pMOSFET drive current has been demonstrated on [110] substrates at L/sub poly/=0.12 /spl mu/m, while current reduction in nMOS is around 26%.

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