Article

Principles of transient charge pumping on partially depleted SOI MOSFETs

Swiss Fed. Inst. of Technol., Lausanne, Switzerland
IEEE Electron Device Letters (Impact Factor: 2.79). 06/2002; DOI: 10.1109/55.998876
Source: IEEE Xplore

ABSTRACT A new method to determine the interface trap density in partially depleted silicon-on-insulator (SOI) floating body MOSFETs is proposed for the first time. It can be considered as a "transient" charge-pumping (CP) technique in contrast to the normally used "steady-state" method. In our technique, majority carriers are removed from the floating body by applying a burst of pulses to the transistor gate. The change in the linear drain current after each pulse is used to determine the device interface trap density. The unique advantage of this method is the possibility to use it to characterize SOI MOSFETs without a body contact. The technique proposed is simple, reliable, and can be used for the characterization of deep submicron devices.

0 Bookmarks
 · 
83 Views
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: A novel interface characterization technique is proposed to extract interface trap density $N_{\rm it}$ in fully depleted silicon-on-insulator MOSFETs. The proposed technique utilizes the temporal variation of the drain current, which is caused by the application of a single pulse to the gate in order to trigger charge pumping (CP). Vacant interface traps created as a result of recombination through the CP effect are gradually filled by carriers generated from a floating body (FB). By the characterization of this transient phenomenon, the interface trap density is directly extracted from FB devices without extra body contacts.
    IEEE Transactions on Electron Devices 01/2012; 59(1):241-246. · 2.06 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We introduce an ac transconductance dispersion method (ACGD) to profile the oxide traps in an MOSFET without needing a body contact. The method extracts the spatial distribution of oxide traps from the frequency dependence of transconductance, which is attributed to charge trapping as modulated by an ac gate voltage. The results from this method have been verified by the use of the multifrequency charge pumping (MFCP) technique. In fact, this method complements the MFCP technique in terms of the trap depth that each method is capable of probing. We will demonstrate the method with InP passivated InGaAs substrates, along with electrically stressed Si N-MOSFETs.
    IEEE Electron Device Letters 01/2012; 33(3):438-440. · 2.79 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Many Ge and III-V-based MOSFETs, as well as GaN-based MOS-HEMTs, are significantly compromised in performance and reliability by their high densities of interface, border, and oxide traps. Problems may also arise when characterizing traps in FETs made on high-mobility channels due to their device structures and material properties that are different from their conventional counterparts. In this paper, we present the results of our study of these traps as obtained by the use of several electrical characterization techniques. In particular, we will discuss the ac transconductance technique that we have recently proposed, which enables us to probe interface traps in the band gap and border and bulk traps in the gate dielectrics even without a body contact. We will also show that the inelastic electron tunneling spectroscopy offers the unique possibility to use electrical characterization to understand chemical origins of traps without using additional physical characterization techniques. Ionizing radiation-induced trapping of charges in MOSFETs and MOS-HEMTs made on III-V semiconductors is also reported and discussed.
    IEEE Transactions on Device and Materials Reliability 01/2013; 13(4):463-479. · 1.52 Impact Factor