Principles of transient charge pumping on partially depleted SOI MOSFETs

Swiss Fed. Inst. of Technol., Lausanne, Switzerland
IEEE Electron Device Letters (Impact Factor: 2.75). 06/2002; 23(5):279 - 281. DOI: 10.1109/55.998876
Source: IEEE Xplore


A new method to determine the interface trap density in partially depleted silicon-on-insulator (SOI) floating body MOSFETs is proposed for the first time. It can be considered as a "transient" charge-pumping (CP) technique in contrast to the normally used "steady-state" method. In our technique, majority carriers are removed from the floating body by applying a burst of pulses to the transistor gate. The change in the linear drain current after each pulse is used to determine the device interface trap density. The unique advantage of this method is the possibility to use it to characterize SOI MOSFETs without a body contact. The technique proposed is simple, reliable, and can be used for the characterization of deep submicron devices.

10 Reads
  • Source
    • "However, these types of approaches require additional fabrication processes and are associated with several geometric problems. To overcome the limitations of the use of conventional CP, Okhonin et al. proposed a specific CP technique known as transient CP [6]. Transient CP introduces an impact ionization process to supply majority carriers into the FB without the body contact. "
    [Show abstract] [Hide abstract]
    ABSTRACT: A novel interface characterization technique is proposed to extract interface trap density $N_{\rm it}$ in fully depleted silicon-on-insulator MOSFETs. The proposed technique utilizes the temporal variation of the drain current, which is caused by the application of a single pulse to the gate in order to trigger charge pumping (CP). Vacant interface traps created as a result of recombination through the CP effect are gradually filled by carriers generated from a floating body (FB). By the characterization of this transient phenomenon, the interface trap density is directly extracted from FB devices without extra body contacts.
    IEEE Transactions on Electron Devices 01/2012; 59(1):241-246. DOI:10.1109/TED.2011.2171489 · 2.47 Impact Factor
  • Source
    • "To overcome the limitations of the use of conventional CP, another technique known as a transient CP was previously proposed by Okhonin et al. [11]. This technique was successfully demonstrated on partially and fully depleted FB devices [12]. "
    [Show abstract] [Hide abstract]
    ABSTRACT: An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.
    IEEE Electron Device Letters 02/2011; 32(1-32):84 - 86. DOI:10.1109/LED.2010.2084561 · 2.75 Impact Factor
  • Source
    • "To extract N it accurately, a complete and analytical model should be developed by consideration of several physical effects such as bulk recombination rate, optical generation rate, and recombination rate by the CP process appropriately. In this work, for the proof of concept to validate the optical CP method, the simple equation based on [7] was used to extract N it . "
    [Show abstract] [Hide abstract]
    ABSTRACT: An optical charge-pumping (CP) method is proposed to extract the interface trap density in floating-body (FB) field-effect transistors (FETs). Optically generated majority carriers are removed from the FB by applying a burst of charge-pumping pulses to the gate. The change of the drain current after each CP pulse is used to determine the interface trap density. The advantage of this method lies in the possibility to characterize FB FETs without the unnecessary generation of interface traps by measurement bias. In addition, it can be applied to various types of FB devices directly without structural modification.
    IEEE Electron Device Letters 01/2011; 31(12-31):1365 - 1367. DOI:10.1109/LED.2010.2072903 · 2.75 Impact Factor
Show more