Article

Improvement in hot carrier lifetime as a function of N/sub 2/ ion implantation before gate oxide growth in deep submicron NMOS devices

Semicond. Res. Dev. Center, IBM Corp., Hopewell Junction, NY, USA
IEEE Electron Device Letters (impact factor: 2.85). 01/2000; DOI:10.1109/55.806098 pp.602 - 604
Source: IEEE Xplore

ABSTRACT A detailed study of the impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20/spl times/ in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes.

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Keywords

CMOS multilevel metal-dielectric processes
 
extensive post-metal anneals
 
gate oxide growth
 
HC
 
HC degradation correlates
 
HC lifetime
 
HC lifetime improvements
 
Improvements
 
initial interface state density
 
N/sub 2/ I/I process
 
N/sub 2/ ion implantation
 
process-driven HC lifetime improvement
 

F.J. Guarin