Article
High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3- InGaAs Single-Mode VCSELs
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
Journal of Lightwave Technology (impact factor:
2.78).
10/2007;
DOI:10.1109/JLT.2007.903308
pp.2791 - 2798
Source: IEEE Xplore
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Citations (0)
- Cited In (5)
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Conference Proceeding: Efficient optoelectronic de-embedding for VCSEL intrinsic response extraction
[show abstract] [hide abstract]
ABSTRACT: In this present work, we propose a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic transmission behavior. It has been observed that the S<sub>11</sub> reflection coefficient of the chip is only due to the electrical access to the chip composed by the transmission line and cavity contacts. This allows us to decompose the chip into two cascaded subsystems representing the electrical access and the optical cavity respectively. An equivalent electrical circuit is developed for the electrical access behavior and, combined with the transfer matrix formalism, it becomes possible to remove the parasitics contribution from the measured S<sub>21</sub> response. In this way, the intrinsic 3-dB bandwidth of the VCSEL can be determined.Microwave Photonics, 2009. MWP '09. International Topical Meeting on; 11/2009 -
Conference Proceeding: Fabrication and characterization of 1.3-µm InAs quantum-dot VCSELs and monolithic VCSEL arrays
[show abstract] [hide abstract]
ABSTRACT: We present fabrication and characterization of 1.3-µm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) and QD-VCSEL arrays. The continuous-wave (CW) output power of single QD-VCSEL of 1.2 mW with lasing wavelength of 1.28 µm is obtained at room temperature (RT) at a bias current of 15 mA without power saturation. The low threshold current of 1.1 mA can be achieved for the single mode device. We investigate the 3-dB modulation bandwidth of QD-VCSELs with oxide aperture size of 5-µm, 10-µm and 15-µm in the small signal frequency response measurements. Modulation bandwidth of 2.65 GHz is achieved for single-mode QD-VCSEL with oxide aperture size of 5 µm at a bias current of 4.5 mA. The maximum modulation bandwidth of 2.5 GHz can be obtained for multimode QD-VCSEL with oxide aperture size of 10 µm at a bias current of 7 mA. The 61 QD-VCSELs array is also investigated at RT without optimization. Maximum CW output power of 28 mW and pulsed output power of 18 mW are demonstrated for 2-D QD-VCSEL array with threshold current of 50 mA. The far field pattern beam angle of QD-VCSEL arrays at two perpendicular directions are about 18 degree.Communications and Photonics Conference and Exhibition (ACP), 2009 Asia; 12/2009 -
Article: Fabrication and Modulation Characteristics of 1.3-μm P-doped InAs Quantum Dot Vertical Cavity Surface Emitting Lasers
Journal of Physics D: Applied Physics. 02/2009; 42:085117.
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Keywords
1.28-μm GaAs-based vertical-cavity surface-emitting lasers
bandwidth limitations
clear open eyes
conditions
constant drive conditions
error-free transmission
extinction ratio
fundamental mode operation
gain peak
InGaAs quantum wells
large detuning
large oxide aperture
large signal modulation response
manufacturability
output power
oxide aperture
oxide modes
standard single-mode fiber
VCSELs