High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3- InGaAs Single-Mode VCSELs
ABSTRACT High-temperature dynamics, including small and large signal modulation response, of 1.28-μm GaAs-based vertical-cavity surface-emitting lasers (VCSELs) with highly strained InGaAs quantum wells have been investigated. The VCSELs are oxide-confined with a relatively large oxide aperture for high output power and have a surface relief for fundamental mode operation. An inverted surface relief is used to improve manufacturability and to suppress oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. The size dependence of the modulation bandwidth and bandwidth limitations are investigated. A VCSEL with an optimum combination of oxide aperture and surface relief diameters produces clear open eyes with an extinction ratio of > 6 dB at OC-48 and 10-GbE bit rates from 25 °C to 85 °C under constant drive conditions. The same VCSEL is also shown to be capable of error-free transmission (BER < 10-9) over 9 km of standard single-mode fiber under the same conditions.
Conference Proceeding: Efficient optoelectronic de-embedding for VCSEL intrinsic response extraction[show abstract] [hide abstract]
ABSTRACT: In this present work, we propose a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic transmission behavior. It has been observed that the S<sub>11</sub> reflection coefficient of the chip is only due to the electrical access to the chip composed by the transmission line and cavity contacts. This allows us to decompose the chip into two cascaded subsystems representing the electrical access and the optical cavity respectively. An equivalent electrical circuit is developed for the electrical access behavior and, combined with the transfer matrix formalism, it becomes possible to remove the parasitics contribution from the measured S<sub>21</sub> response. In this way, the intrinsic 3-dB bandwidth of the VCSEL can be determined.Microwave Photonics, 2009. MWP '09. International Topical Meeting on; 11/2009
Conference Proceeding: Fabrication and characterization of 1.3-µm InAs quantum-dot VCSELs and monolithic VCSEL arrays[show abstract] [hide abstract]
ABSTRACT: We present fabrication and characterization of 1.3-µm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) and QD-VCSEL arrays. The continuous-wave (CW) output power of single QD-VCSEL of 1.2 mW with lasing wavelength of 1.28 µm is obtained at room temperature (RT) at a bias current of 15 mA without power saturation. The low threshold current of 1.1 mA can be achieved for the single mode device. We investigate the 3-dB modulation bandwidth of QD-VCSELs with oxide aperture size of 5-µm, 10-µm and 15-µm in the small signal frequency response measurements. Modulation bandwidth of 2.65 GHz is achieved for single-mode QD-VCSEL with oxide aperture size of 5 µm at a bias current of 4.5 mA. The maximum modulation bandwidth of 2.5 GHz can be obtained for multimode QD-VCSEL with oxide aperture size of 10 µm at a bias current of 7 mA. The 61 QD-VCSELs array is also investigated at RT without optimization. Maximum CW output power of 28 mW and pulsed output power of 18 mW are demonstrated for 2-D QD-VCSEL array with threshold current of 50 mA. The far field pattern beam angle of QD-VCSEL arrays at two perpendicular directions are about 18 degree.Communications and Photonics Conference and Exhibition (ACP), 2009 Asia; 12/2009
Article: Fabrication and Modulation Characteristics of 1.3-μm P-doped InAs Quantum Dot Vertical Cavity Surface Emitting LasersJournal of Physics D: Applied Physics. 02/2009; 42:085117.