Simple MOSFET-based high-voltage nanosecond pulse circuit

Dept. of Electron. & Comput. Eng. Technol., Arizona State Univ. East, Mesa, AZ, USA
IEEE Transactions on Plasma Science (Impact Factor: 0.95). 11/2004; DOI: 10.1109/TPS.2004.835966
Source: IEEE Xplore

ABSTRACT Using simple but powerful electronics concepts, such as a mass produced Schmitt trigger and integrated MOSFET driver in novel circuit applications, a simple 400-V 75-ns pulse generator (pulser) has been designed, developed, and tested. For a 50-Ω matched load, the pulser produces extremely well-defined, repetitive high-voltage pulses that are free from overshoot and ringing. The width of the pulses is adjustable from 75 ns to 10 ms with the fall times of a few tens of nanoseconds for a negative wave and a repetition period of 1.5 μs with the existing setup. By upgrading to a more complex driver circuit, much lower pulsewidths are possible. Using a 1-4 mm standard commercial cuvette, it is possible to generate electric fields of 4-1 kV/cm with this pulser. The purpose is to try to do electroporation mediated gene therapy on mammalian cells at higher electrical field strengths and submicrosecond or microsecond pulsewidths compared to conventional 200 V/cm and tens of millisecond-duration pulsewidths.

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    ABSTRACT: A computer-controlled adjustable nanosecond pulse generator based on high-voltage MOSFET is designed in this paper, which owns stable performance and miniaturization profile of 32×30×7 cm3. The experiment results show that the pulser can generate electrical pulse with Gaussian rising time of 20 nanosecond, section-adjustable index falling time of 40–200 nanosecond, continuously adjustable repitition frequency of 0–5 kHz, quasi-continuously adjustable amplitude of 0–1 kV at 50 Ω load. And the pulser could meet the requiremen.


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