Article
Vacuum arc ion sources for particle accelerators and ion implantation
Lawrence Berkeley Lab., California Univ., Berkeley, CA
IEEE Transactions on Plasma Science (impact factor:
1.17).
11/1993;
DOI:10.1109/27.249640
pp.537 - 546
Source: IEEE Xplore
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Citations (0)
- Cited In (1)
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Conference Proceeding: A method of producing very high resistivity surface conduction on ceramic accelerator components using metal ion implantation
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ABSTRACT: An important technique used for the suppression of surface flashover on high voltage DC ceramic insulators as well as for RF windows is that of providing some surface conduction to bleed off accumulated surface charge. We have used metal ion implantation to modify the surface of high voltage ceramic vacuum insulators to provide a uniform surface resistivity of approximately 5×10<sup>10</sup> Ω/square. A vacuum arc ion source based implanter was used to implant Pt at an energy of about 135 keV to doses of up to more than 5×10<sup>16</sup> ions/cm<sup>2</sup> into small ceramic test coupons and also into the inside surface of several ceramic accelerator columns 25 cm I.D. by 28 cm long. Here we describe the experimental set-up used to do the ion implantation and summarize the results of our exploratory work on implantation into test coupons as well as the implantations of the actual ceramic columnsParticle Accelerator Conference, 1997. Proceedings of the 1997; 06/1997
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Keywords
50-cm-diameter
accelerator injection
Beams
DC embodiment
general features
hundred keV
ion energy
ion implantation applications
ionized metal plasma
large-area titanium beam
periodic table
plasma production
pulse length
pulsed beam current
pulsed beam currents
steady-state ion current
vacuum arc
Vacuum arc ion charge state distributions
vacuum arc plasmas