Article

Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

CEA/DAM, Bruyeres-le-Chatel, France
IEEE Transactions on Nuclear Science (impact factor: 1.45). 01/2006; DOI:10.1109/TNS.2005.860753
Source: IEEE Xplore

ABSTRACT This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to investigate the influence of isolation upper layers on the device sensitivity. The device cross-sections are analyzed for mono-energetic neutron irradiations and discussed in terms of nuclear interaction type (n-Si and n-O) and distribution of the secondary ion recoils. We also investigate the dimensions of the interaction volume around the sensitive cell as a function of the device architecture.

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Keywords

Bulk SRAMs
 
device sensitivity
 
interaction volume
 
isolation upper layers
 
mono-energetic neutron irradiations
 
Monte Carlo simulations
 
n-Si
 
nuclear interaction type
 
nuclear interactions
 
oxygen nuclei
 
paper investigates
 
secondary ion recoils
 
sensitive cell
 
simulations
 
technology sensitivity