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Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
IEEE Transactions on Nuclear Science (Impact Factor: 1.22). 01/2005; DOI: 10.1109/TNS.2004.839215
Source: IEEE Xplore

ABSTRACT This work presents the first experimental results on the effects of 63.3 MeV proton irradiation on 60 GHz monolithic point-to-point broadband space data link transceiver building blocks implemented in a 200 GHz SiGe heterojunction bipolar transistor (HBT) technology. A SiGe low-noise amplifier and a SiGe voltage-controlled oscillator were each irradiated to proton fluences of 5.0×1013 p/cm2. The device and circuit level performance degradation associated with these extreme proton fluences is found to be minimal, suggesting that such SiGe HBT transceivers should be robust from a proton tolerance perspective for space applications, without intentional hardening at either the device or circuit level.

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    ABSTRACT: The effect of proton irradiation on operating voltage constraints in SiGe HBTs is investigated for the first time in 120 GHz and 200 GHz SiGe HBTs. A variety of operating bias conditions was examined during irradiation, including terminals grounded, terminals floating, and forward active (FA) bias operation. The excess base current degradation at 5.0×10<sup>13</sup> p/cm<sup>2</sup> was similar in all cases. BV<sub>CEO</sub> and BV<sub>CBO</sub> showed no significant signs of degradation with irradiation. We also investigated for the first time the impact of radiation on SiGe HBTs biased under so-called "unstable" conditions (i.e., operating point instabilities). In the case of unstable bias conditions, device degradation under proton exposure is significantly different than for stable bias, and bias conditions can play a significant role in the damage process, potentially raising issues from a hardness assurance perspective.
    IEEE Transactions on Nuclear Science 01/2006; · 1.22 Impact Factor
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    ABSTRACT: Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO<sub>2</sub>). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ
    IEEE Transactions on Nuclear Science 01/2007; · 1.22 Impact Factor
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    ABSTRACT: The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology to extreme environments and to design high-speed circuits in this technology to demonstrate their reliable operation under these conditions. This research focuses on exploring techniques for hardening SiGe HBT digital logic for single event upset (SEU) based on principles of radiation hardening by design (RHBD) as well as on the cryogenic characterization of SiGe HBTs and designing broadband amplifiers for operation at cryogenic temperatures. Representative circuits ranging from shift registers featuring multiple architectures to broadband analog circuits have been implemented in various generations of this technology to enable this effort. Kornegay, Kevin, Committee Member ; Papapolymerou, John, Committee Member ; Morley, Thomas, Committee Member ; Cressler, John, Committee Chair ; Laskar, Joy, Committee Member. Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.

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May 29, 2014