Article

Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
IEEE Transactions on Nuclear Science (Impact Factor: 1.46). 01/2005; DOI: 10.1109/TNS.2004.839215
Source: IEEE Xplore

ABSTRACT This work presents the first experimental results on the effects of 63.3 MeV proton irradiation on 60 GHz monolithic point-to-point broadband space data link transceiver building blocks implemented in a 200 GHz SiGe heterojunction bipolar transistor (HBT) technology. A SiGe low-noise amplifier and a SiGe voltage-controlled oscillator were each irradiated to proton fluences of 5.0×1013 p/cm2. The device and circuit level performance degradation associated with these extreme proton fluences is found to be minimal, suggesting that such SiGe HBT transceivers should be robust from a proton tolerance perspective for space applications, without intentional hardening at either the device or circuit level.

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Available from: B. Gaucher, Dec 27, 2013
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