Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
IEEE Transactions on Nuclear Science (Impact Factor: 1.46). 01/2005; DOI: 10.1109/TNS.2004.839215
Source: IEEE Xplore

ABSTRACT This work presents the first experimental results on the effects of 63.3 MeV proton irradiation on 60 GHz monolithic point-to-point broadband space data link transceiver building blocks implemented in a 200 GHz SiGe heterojunction bipolar transistor (HBT) technology. A SiGe low-noise amplifier and a SiGe voltage-controlled oscillator were each irradiated to proton fluences of 5.0×1013 p/cm2. The device and circuit level performance degradation associated with these extreme proton fluences is found to be minimal, suggesting that such SiGe HBT transceivers should be robust from a proton tolerance perspective for space applications, without intentional hardening at either the device or circuit level.


Available from: B. Gaucher, Dec 27, 2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of conventional silicon-based CMOS manufacturing (high integration levels, at high yield and low cost) with the extreme levels of transistor performance attainable in classical III-V heterojunction bipolar transistors (HBTs). SiGe technology joins together on-die high-speed bandgap-engineered SiGe HBTs with conventional Si CMOS to form SiGe BiCMOS technology, including all the requisite RF passive elements and multi-level thick-Al metalization required for high-speed circuit design. Such an silicon-based integrated circuit technology platform presents designers with an ideal division of labor for realizing optimal solutions to many performance-constrained mixed-signal (analog + digital + RF) systems. The unique bandgap-engineered features of SiGe HBTs enable several key merits with respect to operation across a wide variety of so-called “extreme environments”, potentially with little or no process modification, ultimately providing compelling advantages at the circuit and system level, across a wide class of envisioned commercial and defense applications. Here we give an overview of this interesting field, focusing primarily on the intersection of SiGe HBTs, and circuits built from them, with radiation-intense environments such as space.
    IEEE Transactions on Nuclear Science 06/2013; 60(3):1992-2014. DOI:10.1109/TNS.2013.2248167 · 1.46 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space-based, phased-array antennas used in radar or wireless communication systems. Both phase shifter circuits remain functional with acceptable dc and RF performance up to multi-Mrad proton exposure, and are thus suitable for many orbital applications. In addition, simulation results probing the limits of phase shifter performance in a radiation environment are presented. These results show that both CMOS and SiGe HBT based phase shifters can be used for space-based applications without any specific radiation hardening techniques.
    IEEE Transactions on Nuclear Science 01/2009; 55(6-55):3246 - 3252. DOI:10.1109/TNS.2008.2006968 · 1.46 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63 MeV proton environment at cryogenic temperatures. A 3× increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300 K to 77 K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50 Mbit/s to 4 Gbit/s. Single-bit-errors dominate the proton-induced SEU response at both 300 K and 77 K, as opposed to the multiple-bit-errors seen in the heavy-ion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2 D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton- induced SEU at both 300 K and 77 K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-ion testing at low temperatures.
    Solid-State Electronics 10/2008; DOI:10.1016/j.sse.2008.06.038 · 1.51 Impact Factor