Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
IEEE Transactions on Nuclear Science (Impact Factor: 1.28). 01/2005; 51(6):3781 - 3787. DOI: 10.1109/TNS.2004.839215
Source: IEEE Xplore


This work presents the first experimental results on the effects of 63.3 MeV proton irradiation on 60 GHz monolithic point-to-point broadband space data link transceiver building blocks implemented in a 200 GHz SiGe heterojunction bipolar transistor (HBT) technology. A SiGe low-noise amplifier and a SiGe voltage-controlled oscillator were each irradiated to proton fluences of 5.0×1013 p/cm2. The device and circuit level performance degradation associated with these extreme proton fluences is found to be minimal, suggesting that such SiGe HBT transceivers should be robust from a proton tolerance perspective for space applications, without intentional hardening at either the device or circuit level.

Download full-text


Available from: B. Gaucher, Dec 27, 2013
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) circuits for next-generation ground- and space-based millimeter-wave (MMW >= 30 GHz) communication front-ends and X-band (8 to 12 GHz) radar (radio detection and ranging) modules. The requirements of next-generation transceivers, for both radar and communication applications, are low power, small size, light weight, low cost, high performance, and high reliability. For this purpose, the high-speed circuits that satisfy the demanding specifications of next-generation transceivers are implemented in SiGe HBT BiCMOS technology, and the device-circuit interactions of SiGe HBTs to transceiver building blocks for performance optimization and radiation tolerance are investigated. For X-band radar module components, the dissertation covers: (1) The design of an ultra-low-noise X-band SiGe HBT low-noise-amplifier (LNA). (2) The design of low-loss shunt and series/shunt X-band Si CMOS single-pole double-throw (SPDT) switches. (3) The design of a low-power X-band SiGe HBT LNA for near-space radar applications. For MMW communication front-end circuits, the dissertation covers: (4) The design of an inductorless SiGe HBT ring oscillator for MMW operation. (5) The study of emitter scaling and device biasing on MMW SiGe HBT voltage-controlled oscillator (VCO) performance. (6) The study of proton radiation on MMW SiGe HBT transceiver building blocks. Dr. Kevin T. Kornegay, Committee Member ; Dr. Thomas D. Morley, Committee Member ; Dr. Joy Laskar, Committee Member ; Dr. John D. Cressler, Committee Chair ; Dr. John Papapolymerou, Committee Member. Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology to extreme environments and to design high-speed circuits in this technology to demonstrate their reliable operation under these conditions. This research focuses on exploring techniques for hardening SiGe HBT digital logic for single event upset (SEU) based on principles of radiation hardening by design (RHBD) as well as on the cryogenic characterization of SiGe HBTs and designing broadband amplifiers for operation at cryogenic temperatures. Representative circuits ranging from shift registers featuring multiple architectures to broadband analog circuits have been implemented in various generations of this technology to enable this effort. Kornegay, Kevin, Committee Member ; Papapolymerou, John, Committee Member ; Morley, Thomas, Committee Member ; Cressler, John, Committee Chair ; Laskar, Joy, Committee Member. Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.
  • [Show abstract] [Hide abstract]
    ABSTRACT: We present a review of radiation effects studies on heterojunction bipolar transistors (HBTs) in order to develop a framework for qualifying devices for application in the harsh radiation environment of space. Radiation effects in different HBT material systems are considered here, including Si/SiGe, GaAs/AlGaAs, and InP/InGaAs. We discuss the different effects of ionizing and nonionizing radiation on device performance and review the strong role that device geometry plays in determining the overall radiation tolerance. We present a new comparison of radiation tolerance in conventional transistors, HBTs, and high electron mobility transistors. Finally, we conclude that with proper design, HBTs are excellent candidates for application in space.
    Radiation Effects and Defects in Solids 08/2005; 160(9/September 2005):425-430. DOI:10.1080/14622200500495028 · 0.51 Impact Factor
Show more