Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

Dipartimento di Elettronica e Informazione, Politecnico di Milano
IEEE Transactions on Nuclear Science (Impact Factor: 1.46). 09/1994; DOI: 10.1109/23.322776
Source: IEEE Xplore

ABSTRACT An X-ray spectrograph operating at room-temperature has been
designed and tested. It consists of a small area (1 mm2)
silicon diode detector on a high resistivity bulk and an ultra low noise
preamplifier of new conception. A resolution of 61 RMS electrons (517 eV
FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K.
The limits and perspectives for room temperature operation of silicon
planar diode detectors and related front-end electronics are highlighted

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