Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier
ABSTRACT An X-ray spectrograph operating at room-temperature has been
designed and tested. It consists of a small area (1 mm2)
silicon diode detector on a high resistivity bulk and an ultra low noise
preamplifier of new conception. A resolution of 61 RMS electrons (517 eV
FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K.
The limits and perspectives for room temperature operation of silicon
planar diode detectors and related front-end electronics are highlighted
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- "As a rule of thumb at moderate count rates should be chosen of the order of three times the shaping time. In high-resolution X-ray spectroscopy the optimum shaping time can be of the order of 10 for detectors with leakage currents in the pA range . In this case the time constant of the baseline restorer should be as long as 30 . "
ABSTRACT: We present a compact, fully integrated, low power baseline restorer for radiation detector readout ASICs. The proposed circuit has been designed, simulated, and layed out using a 0.35 μm CMOS technology. It features an area occupancy of 90×100 μm<sup>2</sup> and a power consumption of 90 μW for 3.3V power supplies, which makes it suitable for highly packed multichannel detector readouts. In the paper the principle of operation of the circuit as well as the results of the simulations are discussed.IEEE Transactions on Nuclear Science 11/2005; 52(5-52):1643 - 1646. DOI:10.1109/TNS.2005.856762 · 1.46 Impact Factor
Conference Paper: Silicon detector system for high rate EXAFS application[Show abstract] [Hide abstract]
ABSTRACT: A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35°C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35°C. At room temperature (25°C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applicationsNuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record; 01/1994
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ABSTRACT: A charge amplifier, especially designed for FET integrated on silicon radiation detectors, is presented. The circuit is based on the forward biased FET amplifier configuration, which does not require the feedback resistor nor additional devices for resetting. The severe constraints on the preamplifier design, imposed by the low transconductance of small size integrated FET's, are analyzed as far as loop-gain, bandwidth, and noise are concerned. A circuit topology which satisfies all the requirements even at relatively fast shaping time (1 μs) is proposed and experimentally testedIEEE Transactions on Nuclear Science 09/1995; DOI:10.1109/23.467728 · 1.46 Impact Factor