Article

SIMOX with epitaxial silicon: point defects and positive charge

US Naval Res. Lab., Washington, DC
IEEE Transactions on Nuclear Science (impact factor: 1.45). 01/1992; DOI:10.1109/23.124101 pp.1253 - 1258
Source: IEEE Xplore

ABSTRACT Electron paramagnetic resonance (EPR), capacitance-voltage (CV)
and point contact transistor measurements are used to investigate the
radiation response of the SIMOX substrate emphasizing the difference
between those samples with and without an epitaxial Si layer. It is
shown that the hydrogen present during epitaxial deposition is
responsible for a tenfold increase in radiation induced defects.
Furthermore, the measurements indicate that the density of positive
charge and oxygen vacancy related defects (E' centers) typically
associated with this charge are not correlated in the case of hydrogen
treated buried oxides. A model for E' generation in epitaxial SIMOX will
be developed based on the known influence of hydrogen and lack of
positive charge creation. Results of etch back measurements are briefly
addressed

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    Conference Proceeding: Space and military radiation effects in silicon-on-insulator devices
    J.R. Schwank
    [show abstract] [hide abstract]
    ABSTRACT: Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed.
    08/1996
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Keywords

capacitance-voltage
 
E' centers
 
E' generation
 
Electron paramagnetic resonance
 
epitaxial deposition
 
epitaxial Si layer
 
epitaxial SIMOX
 
etch
 
hydrogen present
 
known influence
 
measurements
 
oxides
 
oxygen vacancy
 
point contact transistor measurements
 
positive charge creation
 
radiation induced defects
 
radiation response
 
responsible
 
SIMOX substrate
 
tenfold increase
 

M.E. Zvanut