Article
Modeling and characterization of SiGe HBT lowfrequency noise figuresofmerit for RFIC applications
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
IEEE Transactions on Microwave Theory and Techniques (Impact Factor: 2.23). 12/2002; DOI: 10.1109/TMTT.2002.804519 Source: IEEE Xplore

Article: Impact of collectorbase junction traps on lowfrequency noise in high breakdown Voltage SiGe HBTs
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ABSTRACT: This work investigates the impact of collectorbase (CB) junction traps on lowfrequency noise in high breakdown voltage (HBV) SiGe HBTs. By comparing the base current and 1/f noise at the same internal emitterbase (EB) voltage of the standard breakdown voltage (SBV) and HBV devices, we show that the CB junction traps not only increase base current, but also contribute base current 1/f noise when high injection occurs. The individual 1/f noise contributions from the emitterbase junction traps and from the collectorbase junction traps are separated. The dependence of the 1/f noise component on the corresponding base current component is determined, and shown to be different for the EB and CB junction traps. The dependence of the total 1/f noise on the total base current, however, remains the same before and after high injection occurs in the HBV device, which is approximately the same as that for the SBV device. The I<sub>B</sub> contribution from the CB junction recombination current needs to be modeled for accurate IV and 1/f noise modeling.IEEE Transactions on Electron Devices 10/2004; · 2.06 Impact Factor 
Conference Paper: Analysis and design of 20 GHz VCOs using crosscoupled differential pair and balanced Colpitts topologies in SiGe:C BiCMOS technology
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ABSTRACT: The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this paper. Two differential topologies have been studied: balanced Colpitts VCO and LCVCO using a crosscoupled differential pair. We have focussed on oscillation frequency, tuning range, phase noise, and output power optimization and buffer stage specifications. SiGe:C heterojunction bipolar transistors of f<sub>T</sub>=55 GHz have been used and produced with a monolithic BiCMOS technology.Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on; 04/2008 
Conference Paper: Impact of collectorbase junction traps and high injection barrier effect on 1/f noise
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ABSTRACT: This work investigates the impact of CB junction traps and high injection barrier effect on 1/f noise in SiGe HBTs. By comparing the 1/f noise of standard and high breakdown voltage HBTs, we show that the collectorbase junction traps result in not only a higher I<sub>B</sub>, but also higher base current 1/f noise at high injection. The base current 1/f noise level remains proportional to I<sub>B</sub><sup>2</sup>.Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the; 10/2003
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