Article

Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor

Inst. of Microelectron., Singapore
IEEE Transactions on Electron Devices (impact factor: 2.32). 12/2006; DOI:10.1109/TED.2006.883677 pp.2839 - 2842
Source: IEEE Xplore

ABSTRACT This brief presents an analytical model that describes a silicon-based RF on-chip metal-insulator-metal (MIM) capacitor including the parasitics originating from its coupling with backend intermetal dielectric (IMD) scheme and the substrate. Results show that the resonant frequency fre depends on the intrinsic capacitance, inductance, and substrate effects of the MIM. The model and fre formula are verified experimentally for several types of MIM capacitors (i.e., high kappa and Si3N4 based) integrated on different IMDs (e.g., undoped glass and low kappa). The results also show that for a given CMIM, if the capacitance density is increased further so that the area is shrunk, and the inductances are reduced to a level that is comparable to the substrate effects from item epsiv0epsivrrhoSi heff|SiR2/heff|IMD, then further fre improvement could be limited

0 0
 · 
0 Bookmarks
 · 
17 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

analytical model
 
backend intermetal dielectric
 
brief presents
 
comparable
 
coupling
 
kappa
 
low kappa
 
parasitics originating
 
resonant frequency f<sub>re</sub>
 
silicon-based RF on-chip metal-insulator-metal
 
substrate
 
substrate effects
 
undoped glass