Noise characteristics of GaN-based IMPATTs

Nat. Inst. of Sci. & Technol., Orissa
IEEE Transactions on Electron Devices (Impact Factor: 2.06). 08/2001; DOI: 10.1109/16.930669
Source: IEEE Xplore

ABSTRACT The potential of noise characteristics of Wz-phase and Znb-phase
GaN IMPATTs is investigated and compared to Si and GaAs-based IMPATTs at
D-band. The noise of GaN-based IMPATTs is found to be higher than that
of GaAs-based IMPATTs but equivalent to Si-based IMPATTs. For increased
operation temperature, the noise is found to decrease

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