Article

# Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

[more]
Department of Physics, North Carolina State University, Raleigh, North Carolina, United States
(Impact Factor: 3.3). 06/2004; 84(23). DOI: 10.1063/1.1759065
Source: OAI

ABSTRACT Amorphous LaAlO(3) thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We have studied these abrupt interfaces by Auger electron spectroscopy, high-resolution transmission electron microscopy, medium-energy ion scattering, transmission infrared absorption spectroscopy, and x-ray photoelectron spectroscopy. Together these techniques indicate that the films are fully oxidized and have less than 0.2 A of SiO(2) at the interface between the amorphous LaAlO(3) and silicon. These heterostructures are being investigated for alternative gate dielectric applications and provide an opportunity to control the interface between the silicon and the gate dielectric. (C) 2004 American Institute of Physics.

### Full-text

Available from: G. Lucovsky, Sep 26, 2015
0 Followers
·
• Source
##### Article: High dielectric constant oxides
[Hide abstract]
ABSTRACT: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO$_{2}$ with a physically thicker layer of oxides of higher dielectric constant ($\kappa)$ or `high $K$' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO$_{2}$, such as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high $K$ oxides in capacitors of dynamic random access memories is also covered.
The European Physical Journal Applied Physics 12/2004; 28(3). DOI:10.1051/epjap:2004206 · 0.77 Impact Factor
• ##### Article: Deposition of LaAlO3 films by liquid injection MOCVD using a new La-Al single source alkoxide precursor
[Hide abstract]
ABSTRACT: The growth of LaAlO3 thin films using a single-source alkoxide precursor [LaAl(OPri)6(PriOH0]2 was reported. The advantages of using alkoxide precursor rather than β-diketonates include lower deposition temperatures and reduced carbon contamination, whilst the use of single source precursor containing the metals in the ratio required in a complex solid oxide offers the potential of improved stochiometry control. X-ray diffraction (XRD) patterns for film deposited at substrate temperature of 500 and 550 °C. The film deposited are essentially amorphous with broad background intensities.
Journal of Materials Chemistry 09/2005; 15(33-33):3384-3387. DOI:10.1039/B507004J · 7.44 Impact Factor
• ##### Article: Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
Electrochemical and Solid-State Letters 01/2005; 8(3). DOI:10.1149/1.1854773 · 2.32 Impact Factor