Article

1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects

Sch. of Electr. Eng., Univ. of Ulsan, South Korea
IEEE Journal of Solid-State Circuits (Impact Factor: 3.06). 07/2004; DOI: 10.1109/JSSC.2004.827795
Source: IEEE Xplore

ABSTRACT A 1-Gb/s differential transimpedance amplifier (TIA) is realized in a 0.25-μm standard CMOS technology, incorporating the regulated cascode input configuration. The TIA chip is then integrated with a p-i-n photodiode on an oxidized phosphorous-silicon (OPS) substrate by employing the multichip-on-oxide (MCO) technology. The MCO TIA demonstrates 80-dBΩ transimpedance gain, 670-MHz bandwidth for 1-pF photodiode capacitance, 0.54-μA average input noise current, -17-dBm sensitivity for 10-12 bit-error rate (BER), and 27-mW power dissipation from a single 2.5-V supply. It also shows negligible switching noise effect from an embedded VCO on the OPS substrate. Furthermore, a four-channel MCO TIA array is implemented for optical interconnects, resulting in less than -40-dB crosstalk between adjacent channels.

0 Bookmarks
 · 
187 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper presents a new high performance wideband CMOS transimpedance amplifier (TIA) for 2.5 Gbps optical transceiver. Our proposed TIA self-regulating adjusts the controllable inductive peeking load and feedback resistances whenever overload condition occurs. The proposed TIA design exhibits bandwidth enhancement, lower input referred noise, and higher amplifier stability. This TIA has 69 dBOmega gain at 3 dB bandwidth, 7.2 pA/radicHz input referred noise and good performance of eye diagram. The TIA operates at the 3.3 V supply voltage, and dissipates about 34 mA for whole circuit. The simulation is accomplished with 1 pF capacitance and 0.85 A/W responsibility photodiode model
    Circuits and Systems, 2005. 48th Midwest Symposium on; 09/2005
  • [Show abstract] [Hide abstract]
    ABSTRACT: A transimpedance amplifier (TIA) has been designed in a 0.35 μm digital CMOS technology for Gigabit Ethernet. It is based on the structure proposed by Mengxiong Li [1]. This paper presents an amplifier which exploits the regulated cascode (RGC) configuration as the input stage with an integrated optical receiver which consists of an integrated photodetector, thus achieving as large effective input transconductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. A series inductive peaking is used for enhancing the bandwidth. The proposed TIA has transimpedance gain of 51.56 dBΩ, and 3-dB bandwidth of 6.57 GHz with two inductor between the RGC and source follower for 0.1 pF photodiode capacitance. The proposed TIA has an input courant noise level of about 21.57 pA/Hz0.5 and it consumes DC power of 16 mW from 3.3 V supply voltage.
    Complex Systems (ICCS), 2012 International Conference on; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper presents the design and measurement results of a novel frequency-mixing transimpedance amplifier (FM-TIA), which is the key building block towards a monolithically integrated optical sensor front-end for frequency domain near-infrared (NIR) spectroscopy (FD-NIRS). The FM-TIA employs a T-feedback network incorporating a gate-controlled transistor for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The proposed FM-TIA is capable of operating either in the traditional wideband mode or the frequency-mixing mode, depending on the applied gate control voltage. A wideband post amplifier is implemented on chip to characterize both modes for comparative study. The wideband mode achieves 107 dBΩ transimpedance gain with 200 MHz bandwidth for 4 pF photodiode capacitance. The measured total integrated input referred current noise is 158 nArms . When the TIA is modulated by a 100 MHz signal with 0.5 V amplitude in the mixing mode, it achieves 92 dBΩ conversion gain. The measured 1 dB compression point is 3.1 μA and IIP3 is 10.6 μA. The input-referred current noise integrated up to 50 kHz is only 10.4 nArms, which is 15 times lower than the wideband mode noise. The FM-TIA together with the post amplifier draws 23 mA from a 1.8 V power supply, where the output buffer consumes 16.15 mA.
    Circuits and Systems I: Regular Papers, IEEE Transactions on 01/2013; 60(1):84-94. · 2.24 Impact Factor

Full-text

View
10 Downloads
Available from