Characteristics of Electrically Driven Two-Dimensional Photonic Crystal Lasers

IEEE Journal of Quantum Electronics (Impact Factor: 2.11). 10/2005; DOI: 10.1109/JQE.2005.852800
Source: IEEE Xplore

ABSTRACT We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor “wire” at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a “practical” form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.

  • [Show abstract] [Hide abstract]
    ABSTRACT: We report laterally injected photonic crystal membrane light emitters that are clad on one surface by metal. Light emission from an electrically injected photonic crystal defect cavity is reported. Carriers are injected via a lateral diode that is formed in an InGaAsP membrane using ion implantation. The membrane is removed from its native InP substrate and placed on a thin dielectric layer above Au. The Au-coated substrate provides a large index contrast and good thermal conduction. A cavity resonance in the DC electroluminescence and photopumped laser operation are both observed at room temperature.
    Indium Phosphide and Related Materials (IPRM), 2012 International Conference on; 01/2012
  • [Show abstract] [Hide abstract]
    ABSTRACT: Three electrical injection schemes based on recently demonstrated electrically pumped photonic crystal nanolasers have been numerically investigated: 1) a vertical p-i-n junction through a post structure; 2) a lateral p-i-n junction with a homostructure; and 3) a lateral p-i-n junction with a buried heterostructure. Self-consistent laser-diode simulations reveal that the lateral injection scheme with a buried heterostructure achieves the best lasing characteristics at a low current, whereas the vertical injection scheme performs better at a higher current for the chosen geometries. For this analysis, the properties of different schemes, i.e., electrical resistance, threshold voltage, threshold current, and internal efficiency as energy requirements for optical interconnects are compared and the physics behind the differences is discussed.
    IEEE Photonics Technology Letters 01/2014; 26(4):330-333. · 2.04 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We demonstrate a quantum dot photonic crystal nanocavity laser electrically pumped by a lateral p-i-n junction. Thresholds of 181 nA at 50 K and 287 nA at 150 K are observed, lower than any other laser.
    Lasers and Electro-Optics (CLEO), 2011 Conference on; 01/2011

Full-text (2 Sources)

Available from
May 21, 2014