Article

Picosecond injection laser: a new technique for ultrafast Q-switching

Optoelectron. Lab., P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow
IEEE Journal of Quantum Electronics (impact factor: 1.88). 01/1989; DOI:10.1109/3.14367
Source: IEEE Xplore

ABSTRACT A modification of a method for self- Q -switching in a
laser with an isotypic saturable absorber is suggested and implemented
in a multisegmented injection laser. The method consists of the
transportation of most parts of the excited absorber population to the
amplifier. The carrier transport time must be less than the spontaneous
recombination time in the absorber. In a three-section AlGaAs/GaAs
double-heterostructure laser with modified Q -switching, optical
pulses of 5 ps in duration with a repetition rate as high as 18.5 GHz
and peak power above 10 W have been obtained. The latter value is the
largest ever reported for a picosecond injection laser. Unique temporal
and spectral features exhibited by these lasers have been observed,
including the stepped variation of pulse repetition frequency, its
dependence on the pump current, large emission spectral width (on the
order of kT ), spectral chaos and bistability

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Keywords

amplifier
 
bistability
 
isotypic saturable absorber
 
large emission spectral width
 
multisegmented injection laser
 
parts
 
picosecond injection laser
 
pulse repetition frequency
 
pulses
 
Q -switching
 
repetition rate
 
self- Q -switching
 
spectral features exhibited
 
stepped variation
 
transportation
 
Unique temporal
 

P.P. Vasil'ev