Ultrahigh-performance inverters based on CdS nanobelts.
ABSTRACT We report ultrahigh-performance inverters, each consisting of two top-gate metal-oxide-semiconductor field-effect transistors based on n-CdS nanobelts. High-kappa HfO(2) dielectrics are used as the top-gate oxide layers. The inverters have a large supply voltage (V(DD)) range (from 50 mV to 10 V) and very high voltage gain ( approximately 10, 100, and 1000 at V(DD) = 0.2, 1, and 10 V, respectively). Current consumption is less than 7 nA at V(DD) = 1 V, corresponding to a power consumption of less than 7 nW. The high and low output voltages are close to full rail. The inverters also exhibit good dynamic behavior with square wave input at frequencies up to 1 kHz. The operation of the inverters is analyzed in detail. The inverters are promising for future low power high performance logic circuit applications.
- SourceAvailable from: Hongqiang WangAdvanced Materials 08/2010; 22(29):3161-5. · 14.83 Impact Factor
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ABSTRACT: Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics. KeywordsStrain-gradient effect–CdS nanowire–bending deformation–cathodoluminescenceNano Research 04/2012; 4(3):308-314. · 7.39 Impact Factor
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ABSTRACT: One-dimensional (1D) semiconductor nanostructures are of prime interest due to their potential in investigating the size and dimensionality dependence of the materials' physical properties and constructing nanoscale electronic and optoelectronic devices. Cadmium sulfide (CdS) is an important semiconductor compound of the II-VI group, and its synthesis and properties have been of growing interest owing to prominent applications in several fields. This article provides a comprehensive review of the state-of-the-art research activities that focus on the rational synthesis, novel properties and unique applications of 1D CdS nanostructures in nanotechnology. It begins with the rational design and synthesis of 1D CdS nanostructures, and then highlights a range of unique properties and applications (e.g. photoluminescence, cathodoluminescence, electrochemiluminescence, photocatalysis, lasers, waveguides, modulators, solar cells, field-effect transistors, photodetectors, field-emitters, and nanogenerators) associated with them. Finally, the review is concluded with the author outlook of the perspectives with respect to future research on 1D CdS nanostructures.Nanoscale 02/2010; 2(2):168-87. · 6.23 Impact Factor