Article

Ultrahigh-performance inverters based on CdS nanobelts.

State Key Lab for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China.
ACS Nano (impact factor: 10.77). 09/2009; 3(10):3138-42. DOI:10.1021/nn9008438 pp.3138-42
Source: PubMed

ABSTRACT We report ultrahigh-performance inverters, each consisting of two top-gate metal-oxide-semiconductor field-effect transistors based on n-CdS nanobelts. High-kappa HfO(2) dielectrics are used as the top-gate oxide layers. The inverters have a large supply voltage (V(DD)) range (from 50 mV to 10 V) and very high voltage gain ( approximately 10, 100, and 1000 at V(DD) = 0.2, 1, and 10 V, respectively). Current consumption is less than 7 nA at V(DD) = 1 V, corresponding to a power consumption of less than 7 nW. The high and low output voltages are close to full rail. The inverters also exhibit good dynamic behavior with square wave input at frequencies up to 1 kHz. The operation of the inverters is analyzed in detail. The inverters are promising for future low power high performance logic circuit applications.

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    Article: Linear strain-gradient effect on the energy bandgap in bent CdS nanowires
    Qiang Fu, Zi Yue Zhang, Liangzhi Kou, Peicai Wu, Xiaobing Han, Xinli Zhu, Jingyun Gao, Jun Xu, Qing Zhao, Wanlin Guo, Dapeng Yu
    [show abstract] [hide abstract]
    ABSTRACT: Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics. KeywordsStrain-gradient effect–CdS nanowire–bending deformation–cathodoluminescence
    Nano Research 04/2012; 4(3):308-314. · 6.97 Impact Factor
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Keywords

1 kHz
 
Current consumption
 
inverters
 
large supply voltage
 
low output voltages
 
n-CdS nanobelts
 
square wave input
 
top-gate metal-oxide-semiconductor field-effect transistors
 
top-gate oxide layers