A hybrid AlGaInAs-silicon evanescent waveguide photodetector

University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106, USA.
Optics Express (Impact Factor: 3.49). 06/2007; 15(10):6044-52. DOI: 10.1364/OE.15.006044
Source: PubMed


We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mum wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.

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    • "reported previously in [10]. In the second taper type, i.e., Type 2, the three taper levels start within 60 m of each other, and the final taper is 100 m long. "
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    ABSTRACT: The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the optical mode from a silicon waveguide to a hybrid silicon III/V waveguide. A passive chip was fabricated with an epitaxial layer similar to those used in hybrid silicon lasers. To separate optical scattering and mode mismatch from quantum-well absorption, the active layer in this paper was designed to be at 1410 nm, to allow measurements at 1550 nm. Using cutback structures, the taper loss and the taper reflection are quantified. Taper losses between 0.2 and 0.6 dB per taper and reflections below -41 dB are measured.
    IEEE Photonics Journal 04/2013; 5(2):6600410-6600410. DOI:10.1109/JPHOT.2013.2246559 · 2.21 Impact Factor
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    • "Most recently, electrically pumped Ge lasers have been demonstrated; however, the technology is still in its infancy [3]. Hybrid III-V platform by wafer bonding has also been investigated for active devices including lasers and photodetectors [4] [5] [6]. Nonetheless, the major shortcomings are the difficulty in controlling the wafer-bonding strength and the reliability, which highly depend on the wafer surface micro-morphology and cleanliness. "
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    ABSTRACT: In this paper we review our recent progress in two complementary approaches to photodetectors on silicon photonic chips for on-chip optical interconnection applications, namely epitaxially grown III-V-on-silicon and all-silicon microcavity-enhanced photodetectors, both for the 1550nm wavelengths. On the epitaxially grown III-V-on-silicon photodetectors front, we have demonstrated both normal-incidence and waveguide-butt-coupled p-i-n photodetectors. We simulate the silicon waveguide butt-coupling to the InGaAs absorption region and estimate the absorption efficiency using a three-dimensional finite-difference time-domain method. We optimize the InGaAs absorption region in order to attain a bandwidth of 46 GHz. We also report our latest experimental demonstration of all-silicon microresonator enhanced linear-absorption photodetectors using defect-state absorption in pn-diode-integrated microresonators. Our initial experiments reveal the measured bandwidths to be exceeding 10 GHz.
    Conference on Optoelectronic Integrated Circuits XV; 03/2013
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    • "However, there exists an inherent difficulty in integrating a material that absorbs in the C-band into a CMOScompatible SOI based process. Recently, there has been significant progress towards this goal with hybrid integration of III-V materials [1], and also with the integration of Ge [2] [3] [4]; albeit, both of these techniques have significant challenges. Hybrid integration is performed as a serial backend process, and does not provide integration into the CMOS line. "
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    ABSTRACT: We experimentally demonstrate error-free operation of an all Si ion implanted CMOS compatible PIN photodiode at 1.55 mu m with 2.5-Gb/s and 10-Gb/s data rates. Detector sensitivity as a function of bias voltage is measured.
    CLEO: Science and Innovations; 01/2012
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