A hybrid AlGaInAs-silicon evanescent waveguide photodetector

University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106, USA.
Optics Express (Impact Factor: 3.49). 06/2007; 15(10):6044-52. DOI: 10.1364/OE.15.006044
Source: PubMed


We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mum wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.

Download full-text


Available from: Alexander Fang, Oct 01, 2015
22 Reads
  • Source
    • "reported previously in [10]. In the second taper type, i.e., Type 2, the three taper levels start within 60 m of each other, and the final taper is 100 m long. "
    [Show abstract] [Hide abstract]
    ABSTRACT: The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the optical mode from a silicon waveguide to a hybrid silicon III/V waveguide. A passive chip was fabricated with an epitaxial layer similar to those used in hybrid silicon lasers. To separate optical scattering and mode mismatch from quantum-well absorption, the active layer in this paper was designed to be at 1410 nm, to allow measurements at 1550 nm. Using cutback structures, the taper loss and the taper reflection are quantified. Taper losses between 0.2 and 0.6 dB per taper and reflections below -41 dB are measured.
    IEEE Photonics Journal 04/2013; 5(2):6600410-6600410. DOI:10.1109/JPHOT.2013.2246559 · 2.21 Impact Factor
  • Source
    • "However, there exists an inherent difficulty in integrating a material that absorbs in the C-band into a CMOScompatible SOI based process. Recently, there has been significant progress towards this goal with hybrid integration of III-V materials [1], and also with the integration of Ge [2] [3] [4]; albeit, both of these techniques have significant challenges. Hybrid integration is performed as a serial backend process, and does not provide integration into the CMOS line. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We experimentally demonstrate error-free operation of an all Si ion implanted CMOS compatible PIN photodiode at 1.55 mu m with 2.5-Gb/s and 10-Gb/s data rates. Detector sensitivity as a function of bias voltage is measured.
    CLEO: Science and Innovations; 01/2012
  • Source
    • "The light–current (L–I) characteristic of the DFB laser is measured on chip by collecting light out of both sides of the laser with integrated photodetectors. To determine the laser power output, we assume 100% internal quantum efficiency of the photodetectors [36] in order to conservatively assess the laser performance. It can be seen from Fig. 5 that at 15 • C, the lasing threshold is 18 mA with a maximum output power of 10.4 mW. "
    [Show abstract] [Hide abstract]
    ABSTRACT: The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.
    IEEE Journal of Selected Topics in Quantum Electronics 07/2011; 17(3-17):671 - 688. DOI:10.1109/JSTQE.2011.2106112 · 2.83 Impact Factor
Show more