Article

Enhanced third-order nonlinear effects in optical AlGaAs nanowires

Università degli Studi di Brescia, Brescia, Lombardy, Italy
Optics Express (Impact Factor: 3.49). 11/2006; 14(20):9377-84. DOI: 10.1364/OE.14.009377
Source: PubMed

ABSTRACT We report the first observation of enhanced third-order nonlinear effects in AlGaAs nanowires. AlGaAs nanowaveguides with widths varying from 100 to 600nm were fabricated and characterized. Nonlinear phase shifts of approximately pi were experimentally observed at 1.55mum with peak powers of 30-40W in 600mum long, 550nm wide guides.

Download full-text

Full-text

Available from: Costantino De Angelis, Feb 15, 2015
0 Followers
 · 
111 Views
  • Source
    • "This enables reasonable nonlinear efficiency in GaAs waveguides, even without using submicrometer mode sizes. Third-order nonlinear effects have been observed in several GaAs–AlGaAs devices including waveguides [6], directional couplers [7], microring resonators [8], photonic crystal cavities [9], and nanowires [10]. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We demonstrate the simultaneous conversion of wavelength and nonreturn-to-zero to return-to-zero (RZ) format at 10 Gb/s, using four-wave mixing in a passive GaAs bulk-waveguide. A conversion efficiency of -28 dB (idler output relative to signal output) and a conversion bandwidth of 48 nm could be achieved in this waveguide, which was fabricated in a single photolithographic step. The conversion efficiency is also characterized and compared with simulated results. The converted RZ on-off keying (RZ-OOK) signal demonstrated a 10<sup>-9</sup> bit-error-rate receiver sensitivity penalty of 1 dB relative to baseline RZ-OOK.
    IEEE Photonics Technology Letters 07/2010; DOI:10.1109/LPT.2010.2047009 · 2.18 Impact Factor
  • Source
    • "An SOA is also an active device that requires current-injection circuitry, temperature control, and is difficult to integrate with passive waveguide structures. Passive nonlinear waveguides, such as silicon nanowires [3], [4], AlGaAs nanowires [5], or chalcogenide glass waveguides [6], [7] could provide simpler solutions that require no control electronics. Yet, nano-scale waveguides can also be challenging to fabricate, requiring high-resolution lithography and additional processing for integrated mode-adapters to facilitate coupling to fibers. "
    [Show abstract] [Hide abstract]
    ABSTRACT: Wavelength conversion of a 10-Gb/s return-to-zero on-off-keyed (RZ-OOK) signal has been achieved using transient cross-phase modulation in a passive GaAs-AlGaAs bulk-waveguide, followed by a detuned filter. The converted RZ-OOK signal showed a power penalty of <1 dB at a bit-error-rate of 10<sup>-9</sup> relative to the baseline RZ-OOK signal.
    IEEE Photonics Technology Letters 06/2010; DOI:10.1109/LPT.2010.2043427 · 2.18 Impact Factor
  • Source
    • "This enables reasonable nonlinear efficiency in GaAs waveguides, even without using sub-micron mode sizes. Third-order nonlinear effects have been observed in several GaAs/AlGaAs devices including waveguides [6], directional couplers [7], microring resonators [8], photonic crystal cavities [9] and nanowires [10]. The nonlinear efficiency in these devices is typically limited by propagation loss. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We demonstrate the simultaneous conversion of wavelength and non-return-to-zero to return-to-zero (NRZ to RZ) format at 10 Gb/s, using four-wave mixing (FWM) in a passive GaAs bulk-waveguide. A conversion efficiency of –28 dB and a –3 dB conversion bandwidth of 48 nm could be achieved in this waveguide, which was fabricated in a single photolitho-graphic step. The conversion efficiency is also characterized and compared with simulated results. The converted RZ-OOK signal demonstrated a 10 −9 -BER receiver sensitivity penalty of 1 dB relative to baseline RZ-OOK.
Show more