Article

Observation of stimulated Raman amplification in silicon waveguides.

California Univ., Los Angeles, CA, USA
Optics Express (Impact Factor: 3.55). 08/2003; 11(15):1731-9. DOI: 10.1364/OE.11.001731
Source: PubMed

ABSTRACT We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides. Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in Silicon-on-Insulator (SOI) waveguides, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide. Two-Photon-Absorption (TPA) measurements on these waveguides are also reported, and found to be negligible at the pump power where SRS was observed.

1 Bookmark
 · 
61 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: The application of novel technologies to silicon electronics has been intensively studied with a view to overcoming the physical limitations of Moore's law, that is, the observation that the number of components on integrated chips tends to double every two years. For example, silicon devices have enormous potential for photonic integrated circuits on chips compatible with complementary metal-oxide-semiconductor devices, with various key elements having been demonstrated in the past decade. In particular, a focus on the exploitation of the Raman effect has added active optical functionality to pure silicon, culminating in the realization of a continuous-wave all-silicon laser. This achievement is an important step towards silicon photonics, but the desired miniaturization to micrometre dimensions and the reduction of the threshold for laser action to microwatt powers have yet to be achieved: such lasers remain limited to centimetre-sized cavities with thresholds higher than 20 milliwatts, even with the assistance of reverse-biased p-i-n diodes. Here we demonstrate a continuous-wave Raman silicon laser using a photonic-crystal, high-quality-factor nanocavity without any p-i-n diodes, yielding a device with a cavity size of less than 10 micrometres and an unprecedentedly low lasing threshold of 1 microwatt. Our nanocavity design exploits the principle that the strength of light-matter interactions is proportional to the ratio of quality factor to the cavity volume and allows drastic enhancement of the Raman gain beyond that predicted theoretically. Such a device may make it possible to construct practical silicon lasers and amplifiers for large-scale integration in photonic circuits.
    Nature 06/2013; 498(7455):470-474. · 38.60 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: We present a general study of pulse amplification in silicon Raman amplifiers, with special emphasis on the effects of spectral compression and group delay due to the Raman gain dispersion. We use the undepleted-pump approximation to analytically calculate the dynamics of an arbitrary pulse spectra and find the temporal profile of the pulse at the amplifier's output. We show that cw-pumped silicon waveguides are extremely inefficient in amplification of subpicosecond optical pulses but provide large net gains and controllable group delays for pulses with widths of ∼10 ps.
    Optics Letters 09/2010; 35(18):3138-40. · 3.39 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this Letter, we propose an all-optical circuit for a cascadable and integrable logic inverter based on stimulated Raman scattering. A maximum product criteria for noise margin is taken to analyze the cascadability of the inverter. Variation of noise margin for different model parameters is also studied. Finally, the time domain response of the inverter is analyzed for different widths of input pulses.
    Optics Letters 12/2013; 38(23):5192-5. · 3.39 Impact Factor

Full-text (2 Sources)

View
25 Downloads
Available from
May 21, 2014