Article

Observation of stimulated Raman amplification in silicon waveguides

California Univ., Los Angeles, CA, USA
Optics Express (Impact Factor: 3.53). 08/2003; 11(15):1731-9. DOI: 10.1364/OE.11.001731
Source: PubMed

ABSTRACT We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides. Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in Silicon-on-Insulator (SOI) waveguides, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide. Two-Photon-Absorption (TPA) measurements on these waveguides are also reported, and found to be negligible at the pump power where SRS was observed.

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Available from: Bahram Jalali, Jan 04, 2014
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    • "γ K ,l is related to the Kerr coefficient n 2 = 6 × 10 −5 cm 2 /GW and the coefficient for TPA β T = 0.45 cm/GW in the near-infrared wavelength domain [22], whereas γ R,l depends on the Raman shift Ω R = 2π × 15.6 THz, the Raman linewidth Γ R = 2π × 52.5 GHz [22], [34], and the Raman gain g R,ref = 20 cm/GW at the reference frequency ω ref = 2πc/1542.3 nm [36] "
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    • "The use of SRS in silicon waveguides was proposed in 2002 as a means to realize silicon amplifiers and lasers (Claps et al., 2002; OSA Press Room Editorial). This was followed by demonstration of stimulated emission (Claps et al., No. 15, 2003) and Raman wavelength conversion (Claps et al., No. 22, 2003) in silicon waveguides in 2003. Shortly afterward, the approach led to the demonstration of the first silicon laser in 2004: a device that operated in the pulsed mode (Boyraz & Jalali, 2004; Nature News Editorial) followed by demonstration of continuous-wave (CW) lasing in 2005 (Rong et al., No. 7027, 2005). "
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