Negative differential resistance and resistive switching behaviors in Cu2S nanowire devices
ABSTRACT Two-terminal devices of Cu2S/ZnO core/shell nanowires were fabricated and measured. Forward bias sweeping produced a rectified I-V characteristic of a diode, with turn-on voltages varying from 150 to 300 mV. The turn-on voltages depended on the rate at which the bias was varied. When the bias scan was reversed, a resistive switching (RS) behavior was observed. A low-resistance state was measured, and the diode characteristic diminished. At -50 to -150 mV, negative differential resistance (NDR) was observed, after which the diode behavior was restored. This phenomenon was explained using the diffusion of Cu+ within Cu2S. ZnO acted to limit RS to the positive bias range and NDR to the negative bias range.
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ABSTRACT: In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy Appl. Phys. Lett. 101, 143501 (2012) Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface Appl. Phys. Lett. 101, 133506 (2012) Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices J. Appl. Phys. 112, 063714 (2012) Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors J. Appl. Phys. 112, 054513 (2012) Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations. V C 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755795]Journal of Applied Physics 01/2012; 112(101). · 2.21 Impact Factor
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ABSTRACT: In this paper, a Green's function study of transport through a nano-wire in the presence of electron–electron interaction and external electric field is presented. The total Hamiltonian of the above problem is written in the tight binding approximation and Hubbard term is used to model the interaction between electrons in the central region. Our results show that in the interacting model, a conduction gap will open. Also, if the interaction between the electrons is strong enough, the negative differential resistance (NDR), which is related to the localization of charge, will not occur.Physica E Low-dimensional Systems and Nanostructures 01/2012; 44(s 7–8):1214–1217. · 1.52 Impact Factor
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ABSTRACT: Memristive characteristics in semiconductor/metal contacts are studied by conductive atomic force microscopy. The ZnO/Au device shows excellent memristive characteristics under Pt and TiN tips and the resistances of the high-resistance state and the low-resistance state are almost unchanged with time. Unipolar resistive switching behaviour is observed when a positive voltage is applied. In addition, the pure Au film also shows resistive switching behaviour under the TiN tip which was used to test the ZnO/Au device, but this behaviour cannot be observed under a Pt tip. Our results suggest that the memristive characteristics existing in semiconductor/metal contacts are due to the formation of conducting filaments in the interior of the semiconductor and the change in the energy barrier at the interface between the conductive atomic force microscope tip and the ZnO film.Journal of Physics D Applied Physics 11/2011; 44(47):475102. · 2.53 Impact Factor