Development of nuclear micro-battery with solid tritium source
Nuclear Power Laboratory, Korea Electric Power Research Institute, 65 Munji-Ro, Yuseong-Gu, Daejeon, Republic of Korea.Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine (Impact Factor: 1.23). 03/2009; 67(7-8):1234-8. DOI: 10.1016/j.apradiso.2009.02.064
A micro-battery powered by tritium is being developed to utilize tritium produced from the Wolsong Tritium Removal Facility. The 3D p-n junction device has been designed and fabricated for energy conversion. Titanium tritide is adopted to increase tritium density and safety. Sub micron films or nano-powders of titanium tritide is applied on silicon semiconductor device to reduce the self absorption of beta rays. Until now protium has been used instead of tritium for safety. Hydrogen was absorbed up to atomic ratio of approximately 1.3 and approximately 1.7 in titanium powders and films, respectively.
Conference Paper: Effect of Temperature on the Ni-63 Betavoltaic Cell[Show abstract] [Hide abstract]
ABSTRACT: There are significant relations between temperature and the electrical performances of betavoltaic cell. Two silicon diodes as the energy conversion device of betavoltaic cell were irradiated by Ni-63, checked the relations between temperature and the electrical performances such as Voc , Isc , Pmax etc. Isc increased very little as the temperature increasing but Voc decreased significantly. The changing values of Voc were −3.1 mV/k and −3.0 mV/k respectively within the temperature range of 233.15 K∼333.15 K. As a result of this, the Pmax , η etc. decreased markedly too.18th International Conference on Nuclear Engineering; 01/2010
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ABSTRACT: There is a significant relationship between temperature and electrical performance of a betavoltaic cell. Two silicon diodes used as energy conversion devices of betavoltaic cells were irradiated by Ni-63, and the relationships between the temperature and the electrical performance such as V(oc), I(sc), and P(max) were examined. I(sc) increased very little as temperature increased but V(oc) decreased considerably. The changing values of V(oc) were -3.1 and -3.0 mV/K, respectively, in the temperature range 233.15-333.15 K. As a result of this, P(max) and eta also decreased markedly.Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine 12/2010; 68(12):2214-7. DOI:10.1016/j.apradiso.2010.06.011 · 1.23 Impact Factor
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ABSTRACT: The growth characteristics of titanium films deposited on glass, silicon (100) and oxygen free high purity copper substrate using magnetron sputtering have been investigated using X-ray diffraction, electron microscopy and scratch indentation techniques. The study of interface between the titanium film and the substrate was carried out to determine coating thickness, as well as intermixing of the elements at the interface. Studies revealed that the interface is free from voids and intermixing of the film and the substrate. Microstructural and diffraction analysis showed that the Ti coating was polycrystalline and exhibited columnar growth. The Ti crystallite size varied between 24 and 58 nm depending on the substrate. The thickness of the films were typically about 4 μm. Scratch test indicated that the films are adherent and the first critical load to failure was observed to be 4·5 N ± 2 N.Bulletin of Materials Science 06/2011; 34(3-3):483-489. DOI:10.1007/s12034-011-0118-0 · 1.02 Impact Factor
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