Article

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures.

Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA.
Nano Letters (impact factor: 13.2). 02/2009; 9(2):648-54. DOI:10.1021/nl802997p pp.648-54
Source: PubMed

ABSTRACT We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-II homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

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Keywords

2 orders
 
carrier dynamics
 
conduction
 
excitons
 
holes
 
monolayer-scale ZB sections
 
observed recombination lifetime increases
 
simple computational model
 
single InP nanowires
 
type-II homostructure
 
valence band barriers
 
wurtzite
 
WZ
 
WZ nanowire