STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states.

CNRS-Laboratoire de Photonique et de Nanostructures, route de Nozay, F-91460, Marcoussis, France.
Physical Review Letters (Impact Factor: 7.73). 12/2008; 101(19):196801. DOI: 10.1103/PhysRevLett.101.196801
Source: arXiv

ABSTRACT We show that scanning tunneling microscopy (STM) images of subsurface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wave-function imaging. Atomic-resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting for both the buckled (110) surface and vacuum electronic properties. Splitting of the acceptor state due to buckling is shown to play a prominent role.

  • [Show abstract] [Hide abstract]
    ABSTRACT: The electronic properties of single Fe atoms in the surface of p-type GaAs(110) are investigated by scanning tunneling microscopy (STM) and spectroscopy. In STM images, Fe atoms show a characteristic structure with an orientation that matches the GaAs substrate lattice. Fe is assumed to occupy substitutional sites in the surface. Spectra of the differential conductance on Fe reveal several distinct peaks. They are discussed in the context of electronic states that originate from hybridization between d orbitals of the Fe atom and p-like orbitals of neighboring As atoms.
    Physical Review B 09/2013; · 3.66 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance as well as locally on the fundamental properties of a semiconductor. New applications that require the discrete character of a single dopant, such as single-spin devices in the area of quantum information or single-dopant transistors, demand a further focus on the properties of a specific dopant. This article describes the huge advances in the past decade towards observing, controllably creating and manipulating single dopants, as well as their application in novel devices which allow opening the new field of solotronics (solitary dopant optoelectronics).
    Nature Material 02/2011; 10(2):91-100. · 35.75 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: We perform accurate tight binding simulations to design type-II short-period CdSe/ZnTe superlattices suited for photovoltaic applications. Absorption calculations demonstrate a very good agreement with optical results with threshold strongly depending on the chemical species near interfaces.
    Nanoscale Research Letters 10/2012; 7(1):543. · 2.52 Impact Factor

Full-text (3 Sources)

Available from
Jun 4, 2014