Article

Silicene and Germanene: A First Principle Study of Electronic Structure and Effect of Hydrogenation-Passivation

Journal of Computational and Theoretical Nanoscience (Impact Factor: 1.03). 03/2014; 11(3):1-8. DOI: 10.1166/jctn.2014.3428

ABSTRACT Using first principle calculations we have explored the structural and electronic properties of silicene (silicon analogue of graphene) and germanene (germanium analogue of graphene). The structural optimization reveals that buckled silicene and germanene are more stable than their planar counterparts by about 0.1 and 0.35 eV respectively. In comparison to planar graphene (buckling parameter Δ = 0 Å) the germanium sheet is buckled by 0.737 Å and silicene by 0.537 Å but both have similar electronic structure with zero band gap at K point as that of graphene. Further we investigated the effects of complete hydrogenation on these materials by considering different geometrical configurations (chair, boat, table and stirrup) and found that chair-like structure has the highest binding energy per atom in comparison to other structures. Hydrogenated silicene (silicane) shows an indirect band gap of 2.23 eV while hydrogenated germanene (germanane) possess a direct band gap of 1.8 eV.

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    ABSTRACT: The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials – silicene, germanene, stanene, and phosphorene – with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano- and opto-electronic applications are identified.
    Small 11/2014; · 7.82 Impact Factor

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