Article

# Operation of Graphene Transistors at GHz Frequencies

01/2009;
Source: arXiv

ABSTRACT Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.

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### Keywords

characteristics analyzed

dc transconductance gm

FET-like behavior

gate length

graphene-based electronics

high-frequency applications

measured intrinsic current gain

realization

reduced gate length

significant step

Top-gated graphene transistors