Record Performance of Electrical Injection Sub-wavelength Metallic-Cavity Semiconductor Lasers at Room Temperature

Optics Express (Impact Factor: 3.49). 02/2013; 21(4):4728-4733. DOI: 10.1364/OE.21.004728
Source: arXiv


We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

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