Article

Review of Chemical Vapor Deposition of Graphene and Related Applications

Department of Electrical Engineering, ‡Department of Chemistry, and §Department of Chemical Engineering and Materials Science, University of Southern California , Los Angeles, California 90089, United States.
Accounts of Chemical Research (Impact Factor: 24.35). 03/2013; 46(10). DOI: 10.1021/ar300203n
Source: PubMed

ABSTRACT Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors.

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    • "For this reason STL has to be performed on graphene supported on an electrically conductive substrate. The most obvious candidate in for this is graphene prepared on a copper surface by CVD [9] [30], which is a promising method to grow high quality graphene layers on a large scale. Furthermore, graphene can now be routinely transferred from the initial copper surface to arbitrary substrates [31] [32], raising the possibility of transferring the STL prepared nanostructures to insulating surfaces for further characterization. "
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