4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

Optics Express (Impact Factor: 3.49). 01/2013; 21(2):1599-605. DOI: 10.1364/OE.21.001599
Source: PubMed


We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 µm core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced.

Download full-text


Available from: K.G. Wilcox, Oct 04, 2015
1 Follower
83 Reads
  • Source
    • "Up-to-date, mode-locking of VECSELs required using resonator-integrated [9] [15] or chip-integrated [16] semiconductor saturable-absorber mirrors (SESAMs). Indeed, besides semiconductor materials, saturable absorbers as graphene [17] [18] and carbon nanotubes [19] have also been employed for ML operation of VECSELs. "
    [Show abstract] [Hide abstract]
    ABSTRACT: Vertical-external-cavity surface-emitting lasers (VECSELs) have proved to be versatile lasers which allow for various emission schemes which on the one hand include remarkably high-power multi-mode or single-frequency continuous-wave operation, and on the other hand two-color as well as mode-locked emission. Particularly, the combination of semiconductor gain medium and external cavity provides a unique access to high-brightness output, a high beam quality and wavelength flexibility. Moreover, the exploitation of intra-cavity frequency conversion further extends the achievable radiation wavelength, spanning a spectral range from the UV to the THz. In this work, recent advances in the field of VECSELs are summarized and the demonstration of self-mode-locking (SML) VECSELs with sub-ps pulses is highlighted. Thereby, we present studies which were not only performed for a quantum-well-based VECSEL, but also for a quantum-dot VECSEL.
    SPIE Photonics West 2015, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, San Francisco, CA; United States; 02/2015
  • Source
    • "VECSELs combine the advantages of semiconductor laser technology, such as compact footprint (down to∼3mm cavity length[8]), with the benefits of diode pumped solidstate lasers, such as low timing jitter[9], excellent beam quality[10], high average[10] [11] and peak power[6] [12]. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We report a versatile way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between a single layer graphene (SLG) and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to ∼0. We use this to mode-lock a vertical-external-cavity surface-emitting laser (VECSEL) from 935 to 981 nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors or dielectric coatings on gain materials. Conversely, it can also be used to increase the absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.
    Optics Express 12/2013; 21(25):31548-59. DOI:10.1364/OE.21.031548 · 3.49 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: We report a 1-μm mode-locked VECSEL using a 4.5λ/2 antiresonant microcavity gain structure. The pulses were generated using two different semiconductor saturable absorber mirrors (SESAMs). The first was grown for operation at 1000 nm and the SESAM was heated to 85 °C and the gain cooled to -23 °C to wavelength match the gain and absorber. The second SESAM was designed for 1030 nm and mode-locked operation was achieved with both gain and SESAM at -12 °C. The first approach generated 205-fs pulses with an average power of 2 mW, the second 260-fs pulses with an average power of 13 mW.
    Proceedings of SPIE - The International Society for Optical Engineering 02/2013; DOI:10.1117/12.2004384 · 0.20 Impact Factor
Show more