ArticlePDF Available

Abstract and Figures

The electron-phonon coupling in two-dimensional graphite and metallic single-wall carbon nanotubes is analyzed. The highest-frequency phonon mode at the K point in two-dimensional graphite opens a dynamical band gap that induces a Kohn anomaly. Similar effects take place in metallic single-wall carbon nanotubes that undergo Peierls transitions driven by the highest-frequency phonon modes at the and K points. The dynami-cal band gap induces a nonlinear dependence of the phonon frequencies on the doping level and gives rise to strong anharmonic effects in two-dimensional graphite and metallic single-wall carbon nanotubes.
Content may be subject to copyright.
Electron-phonon coupling mechanism in two-dimensional graphite
and single-wall carbon nanotubes
Ge. G. Samsonidze,1E. B. Barros,1,2 R. Saito,3J. Jiang,3G. Dresselhaus,4and M. S. Dresselhaus1,5
1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology,
Cambridge, Massachusetts 02139-4307, USA
2Departamento de Física, Universidade Federal do Ceará, Fortaleza 60455-760, Ceará, Brazil
3Department of Physics, Tohoku University and CREST JST, Aoba, Sendai 980-8578, Japan
4Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
5Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
Received 19 January 2007; revised manuscript received 6 February 2007; published 19 April 2007
The electron-phonon coupling in two-dimensional graphite and metallic single-wall carbon nanotubes is
analyzed. The highest-frequency phonon mode at the Kpoint in two-dimensional graphite opens a dynamical
band gap that induces a Kohn anomaly. Similar effects take place in metallic single-wall carbon nanotubes that
undergo Peierls transitions driven by the highest-frequency phonon modes at the and Kpoints. The dynami-
cal band gap induces a nonlinear dependence of the phonon frequencies on the doping level and gives rise to
strong anharmonic effects in two-dimensional graphite and metallic single-wall carbon nanotubes.
DOI: 10.1103/PhysRevB.75.155420 PACS numbers: 63.20.Kr, 71.18.y, 71.70.d, 73.22.f
I. INTRODUCTION
Phonon modes of certain symmetries in graphitic materi-
als exhibit a frequency softening, as observed by resonance
Raman scattering from metallic metallic armchair and mini-
band-gap semiconducting chiral and zigzagsingle-wall car-
bon nanotubes1SWNTsand by inelastic x-ray scattering
from a graphite flake.2The frequency softening is attributed
to Peierls instabilities in metallic SWNTs Ref. 3and to
Kohn anomalies in two-dimensional 2Dgraphite a single
graphene sheet.4The Peierls instability, analogous to the
Jahn-Teller effect in molecular systems, occurs when a pho-
non mode opens a dynamical oscillating with the phonon
frequencyband gap at the Fermi level EFin a graphene
sheet5and in metallic SWNTs.3The Kohn anomaly occurs
when electrons at the Fermi surface screen the phonon mode
in a graphene sheet4and in metallic SWNTs.69The two
aforementioned phenomena are manifestations of the same
underlying electron-phonon coupling mechanism. When a
phonon mode opens a dynamical band gap, all the valence
electrons lie in states whose energy is lowered, thus reducing
the total energy and softening the phonon frequency. On the
other hand, the soft phonon mode induces electron scattering
at the Fermi surface, which in turn generates charge-density
waves, opening a dynamical band gap.
In Sec. II, we derive an analytic expression for the elec-
tronic response to the phonon perturbation. In Sec. III, we
study the effect of electronic distortion on the phonon fre-
quency. In both sections, we start our consideration with a
graphene sheet, and then we extend it to metallic SWNTs.
Our approach is based solely on the symmetry of the phonon
modes obtained from group theory GT, and it does not
involve the explicit phonon-dispersion relations. The present
analysis reveals the mechanism of the electron-phonon cou-
pling that is behind Kohn anomalies in a graphene sheet and
metallic SWNTs, which is not examined in the previous pa-
pers devoted to this subject.
II. PEIERLS INSTABILITY
A graphene sheet is defined by the translation vectors a1
and a2in the two-atom unit cell, as shown in Fig. 1ain
light gray.10 The reciprocal-lattice vectors b1and b2are ob-
tained from a1and a2following the standard definition
ai·bj=2
ij, where
ij is the Kronecker delta.10 The first
Brillouin zone BZis spanned by b1and b2, as shown in
Fig. 1bin light gray, where its center and the two inequiva-
lent corners are labeled by the ,K, and Kpoints,
respectively.10 The graphene sheet is a zero-gap semiconduc-
tor with the Fermi surface reduced to two points, kFand kF
,
which appear, respectively, at the Kand Kpoints.10 The
electrons at the Fermi surface are thus scattered either within
the same Kor Kpoint by the phonon modes around the
point intravalley scattering, or between different Kand K
points by the phonon modes near the Kor Kpoint inter-
valley scattering. Below, we consider the point phonon
modes first, and then we turn to the KKpoint phonon
modes.
The group of the wave vector at the point Gis iso-
morphic to the point group D6h. The longitudinal and in-
FIG. 1. aThe two-atom unit cell of the graphene sheet in light
grayand the six-atom supercell at the Kpoint in dark gray.b
The first Brillouin zone BZof the graphene sheet in light gray
and the triple-folded BZ of the Kpoint supercell in dark gray.
PHYSICAL REVIEW B 75, 155420 2007
1098-0121/2007/7515/1554208©2007 The American Physical Society155420-1
plane transverse optical phonon modes LO and iTObelong
to the irreducible representation IRwith E2gsymmetry.11,12
The directions of the atomic displacements specified by IR
E2gare shown in Figs. 2aand b, respectively.12 The
Hamiltonian of the graphene sheet distorted by the E2g
point phonon mode takes the form
H=
HAA HAB
HBA HBB
,1
where matrix elements HAA,HAB,HBA, and HBB are evalu-
ated within the framework of the nearest-neighbor
-band
orthogonal tight-binding model10 in the linear in u/aap-
proximation, thereafter referred to as a simple tight-binding
STBmodel:
HAA =E0+
j
3
uBj uA0·rBj rA0/aCC,
HAB =
j
3
t+
uBj uA0·rBj rA0/aCC
expik·rBj rA0+uBj uA0兲兴,2
HBA =HAB
*, and HBB =HAA. Here, E0is the atomic-orbital en-
ergy set to zero for our energy scale, t=−2.56 eV is the
transfer or hopping integral,13 =39.9 eV is the on-site
electron-phonon coupling EPCcoefficient,13
=58.2 eV/nm is the off-site EPC coefficient,13 rAj and rBj
are the equilibrium atomic positions shown by the open and
solid dots in Fig. 1a, respectively, uAj and uBj are the
atomic displacements associated with the E2gpoint phonon
mode represented by arrows in Figs. 2aand b, subscript
j=0 , ... ,3 labels the central atom and its three nearest neigh-
bors as illustrated in Fig. 1a,aCC =0.142 nm is the inter-
atomic distance, and kis the electron wave vector.
Upon substituting uAj and uBj from Figs. 2aand binto
Eq. 2and setting the determinant of Eq. 1to zero, we find
that kFkF
oscillates at the phonon frequency with displace-
ment amplitude kFkF
given by
kF=−kF
=−23
u
ta y
ˆfor LO,
kF=−kF
=+23
u
ta x
ˆfor iTO, 3
around the KKpoint.3Here, uis the amplitude of phonon
displacements, a=3aCC =0.246 nm is the lattice constant,
and x
ˆ,y
ˆare the unit vectors shown in the inset of Fig. 1b.
Note that kFand kF
are determined by the off-site EPC
coefficient
, since the terms in Eq. 2that are linear in
u/acancel out for the uAj and uBj vectors shown in Figs. 2a
and b.14
The group of the wave vector at the Kpoint GKis iso-
morphic to the point group D3h. Among the longitudinal and
in-plane transverse optical and acoustic phonon modes LO,
iTO, LA, and iTA,15 iTO belongs to IR A1
of group D3h,LO
and LA to IR E, and iTA to A2
.11,12 The directions of the
atomic displacements specified by IRs A1
,E, and A2
are
shown in Figs. 2c,d,e, and f, respectively,12 as are the
C2,C3, and C6rotation axes. Note that the complex traveling
phonon modes at the KKpoint only have the C3rotation
axes, since the group GKis isomorphic to group D3h.12 Time-
reversal symmetry mixes the complex traveling phonon
modes at the Kand Kpoints into the real stationary phonon
modes that obey D6hsymmetry.12
Since the lattice distortions shown in Figs. 2c,d,e,
and fare incommensurate with the two-atom unit cell, the
six-atom supercell must be introduced.5The supercell
spanned by the translation vectors c1and c2for which cj·x
ˆ
=aj·x
ˆand cj·y
ˆ=3aj·y
ˆj=1,2is shown in Fig. 1ain dark
gray. The first BZ for the supercell generated by the recipro-
cal lattice vectors d1and d2for which dj·x
ˆ=bj·x
ˆand dj·y
ˆ
=bj·y
ˆ/3 j=1,2is shown in Fig. 1bin dark gray. One can
see from Fig. 1bthat the dark gray hexagon is obtained by
cutting the light gray hexagon along six M-Llines and fold-
ing it along six L-Llines into one-third of its actual size. The
first BZ of the supercell is therefore triple folded, with both
the Kand Kpoints kFand kF
mapped to the point. The
electronic states at the point are therefore fourfold degen-
erate, but this degeneracy, however, is lifted by the lattice
distortions caused by the Kpoint phonon modes. To study
the degeneracy-lifting mechanism, we employ GT.
The group of the wave vector GkGor GKis isomor-
phic to the group D2hwhen the graphene sheet is distorted by
the E2gor EKpoint phonon modes shown in Figs. 2c,
d,e, and f. The fourfold degenerate electronic state at
the point thus consists of the four one-dimensional 1D
IRs of group D2h: two B1uvalence bandsand two B2gcon-
duction bands. This state therefore splits into two twofold
degenerate states B1u+B2gbelow and above EF. Such a split-
ting shifts the band-crossing points kFand kF
away from the
point to states kand k, respectively, maintaining the
SAMSONIDZE et al. PHYSICAL REVIEW B 75, 155420 2007
155420-2
time-reversal symmetry requirement kF
=−kF. This shift is
allowed by GT because the star of a general wave vector k
0the set of wave vectors generated from kby point-group
operationsconsists of two states, kand k. For the E2g
point phonon modes, the magnitude of this shift is deter-
mined by the off-site EPC coefficient
, according to Eq. 3.
In contrast, the magnitude of this shift is governed by the
on-site EPC coefficient for the EKpoint phonon modes,
for which kFand kF
are given by Eq. 3with /2 sub-
stituted for
.14
The group of the wave vector GKis isomorphic to the
group D6hC6hwhen the graphene sheet is distorted by the
A1
A2
Kpoint phonon mode shown in Fig. 2c兲关Fig. 2f兲兴.
The fourfold degenerate electronic state at the point con-
sists of the two 2D IRs of group D6hC6h:E2uvalence
bandsand E1gconduction bands. This state is therefore not
required to split by GT. If it splits, however, a band gap will
be opened at the point. Indeed, there are only two in-
equivalent Fermi points, kFand kF
, while the star of a gen-
eral wave vector k0 consists of six states. Thus, kFand kF
cannot move away from the point.
To check whether the A1
A2
Kpoint phonon mode opens
a dynamical band gap at the point, we construct the 6
6 STB Hamiltonian at k= 0 for the six-atom supercell.
Labeling atoms in the supercell as shown by numbers 1–6 in
Fig. 2atoms 1 to 3 4to6belong to the ABsublattice,
the Hamiltonian takes the form of Eq. 1, where HAA,HAB,
HBA, and HBB are 33 matrices. For an ideal graphene
sheet, we have
HAA =HBB =
E000
0E00
00
E0
,
HAB =HBA =
ttt
ttt
ttt
.4
Substituting Eq. 4into Eq. 1and setting its determinant to
zero yields the following electronic states:
E=E0+3t,E0,E0,E0,E0,E0−3t.5
The four states Ej=E0with band index j=2,3,4,5 are de-
generate, in agreement with the previous discussion.
For the graphene sheet distorted by the A1
symmetry K
point phonon mode, we construct the STB Hamiltonian con-
sidering the atomic displacements shown in Fig. 2c. Keep-
ing only terms linear in u/a, the terms in HAA and HBB
cancel out, so that HAA and HBB are the same as in Eq. 4,
while HAB and HBA become
HAB =HBA =
t+2
ut
ut
u
t
ut+2
ut
u
t
ut
ut+2
u
.6
Substituting Eqs. 4and 6into Eq. 1and setting its de-
terminant to zero yields the following electronic states:
E=E0+3t,E0−3
u,E0−3
u,E0+3
u,E0+3
u,E0−3t.
7
The A1
Kpoint phonon mode thus splits the fourfold degen-
erate state of Eq. 5,Ej=E0j=2,3,4,5, into the two two-
fold degenerate states of Eq. 7,Ej=E0−3
uj=2,3and
Ej=E0+3
uj=4,5, opening a dynamical band gap of the
following amplitude:
Eg=E4E3=6
ufor KKiTO, 8
which is determined by the off-site EPC coefficient
.5
The interatomic distances in the graphene sheet are not
affected by the A2
symmetry Kpoint phonon mode within
the linear in u/aapproximation see in Fig. 2f兲兴. Thus, nei-
ther nor
terms enter the STB Hamiltonian in Eq. 4, and
we obtain the fourfold degenerate electronic state at the
point described by Eq. 5. However, one of the three inter-
atomic distances in Fig. 2fis slightly changed in the
second-order series expansion with respect to u/a. Such a
deformation opens a dynamical band gap of amplitude Eg
=4
u2/a, which is negligible compared to Eq. 8. Thus, the
only phonon mode associated with the dynamical band gap
in the graphene sheet is the A1
Kpoint phonon mode.5
For a general phonon wave vector qaway from the and
KKpoints, the size of the supercell increases signifi-
cantly, thereby making the supercell method impractical. We
thus implement the linear-response method originally devel-
oped within the framework of density-functional perturba-
tion theory16 and further modified for the extended tight-
binding ETBmodel,9which operates within the original
two-atom unit cell of the graphene sheet. As qvaries from
to KK, the directions of the atomic displacements uAj and
uBj gradually change from those shown in Fig. 2ato the
ones in Fig. 2c. Substituting uAj and uBj into Eqs. 2and
6yields the q-dependent kFkF
and Eginstead of Eqs.
3and 8. In the vicinity of the point, we have qa1.
Keeping only terms linear in qa yields
kF=−kF
=−23
u
ta
1−3qa
2
y
ˆfor LO,
kF=−kF
=+23
u
ta
1−3qa
2
x
ˆfor iTO. 9
In the vicinity of the KKpoint, we have qKa1qKa
1. Keeping only terms linear in qKaqKayields
Eg=6
u
1−3qKa
2
for KiTO,
Eg=6
u
1−3qKa
2
for KiTO, 10
where qKqKis measured from the KKpoint. Thus, the
amplitudes kFkF
and Egreach their maximum values at
the and KKpoints, vanishing halfway between the
and KKpoints, according to Eqs. 9and 10. The de-
tailed derivation of Eqs. 9and 10is given in the Appen-
dix.
ELECTRON-PHONON COUPLING MECHANISM IN TWO-PHYSICAL REVIEW B 75, 155420 2007
155420-3
The same approach can be applied to metallic SWNTs,
whose band structure consists of pairs of mirror valence and
conduction subbands along the 1D momentum quantization
lines in the 2D BZ of the graphene sheet.10 The A1
Kpoint
phonon mode in metallic SWNTs opens a dynamical band
gap or induces oscillations of the mini-band-gap with ampli-
tude given by Eq. 10. The E2gpoint phonon mode in
metallic SWNTs splits into the LO and iTO components in-
volving atomic vibrations in the axial and circumferential
directions, respectively. The LO component shifts kFand kF
perpendicular to the momentum quantization lines, which in
turn opens a dynamical band gap or causes oscillations of the
mini-band-gap with amplitude given by Eq. 10.3The iTO
component induces oscillations of kFand kF
or the band
edges along the momentum quantization lines with ampli-
tudes given by Eq. 9.3
Let us estimate the numerical values of kFand Eg.
Within the second quantization formalism, u=
and
2
=3a2/4M
, where uis the amplitude of phonon dis-
placements,
is the density of phonon states, Mis the mass
of a carbon atom, and
is the phonon frequency. The latter
is
E2g=1582 cm−1 and
A1
兲⬇1300 cm−1 for the phonon
modes of interest.9,1719 Integrating
over the first BZ gives
=1/Aper phonon mode, where A=3a2/2 = 0.052 nm2is
an area of the unit cell. On averaging the scaling factor 1
−3qa /2
兲兴 in Eqs. 9and 10over the first BZ, the effec-
tive density of phonon states contributing to kFand Egis
reduced by a factor of
/183=0.1 for each of the LO E2g
,iTOE2g,A1
K, and A1
Kpoint phonon modes. The
Bose-Einstein distribution at room temperature T=300 K
yields fE2g=510−4 and fA1
=210−3. Putting all the
factors together gives
E2g=10−4 nm−2 and
A1
=8
10−4 nm−2. Using
E2g=6.810−4 nm2and
A1
=7.5
10−4 nm2,wegetuE2g= 0.7 10−5 nm and uA1
=2.1
10−5 nm. Substituting these values into Eqs. 3and 8
yields kF=1.310−4Kalong the y
ˆand x
ˆdirections for
the LO and iTO components of the E2gpoint phonon
mode, and Eg=10 meV for the A1
symmetry Kand Kpoint
phonon modes in the graphene sheet. Similarly, kF=1.3
10−4Kfor the iTO E2gphonon mode, and Eg
=10 meV for the LO E2gand A1
Kand Kphonon modes
in metallic SWNTs.
III. KOHN ANOMALY
The electronic dispersion relations of an ideal graphene
sheet and the graphene sheet distorted by the A1
KKpoint
phonon mode at T=300 K are shown in Fig. 3aby dashed
and solid curves, respectively. The dispersion relations are
calculated within the framework of the long-range
␴␲
-band
nonorthogonal tight-binding model13 without making the ex-
pansion in a power series in u/a, and thereafter referred to as
an ETB model. Considering that the amplitude of the dy-
namical band gap Egis less than the thermal energy T
=26 meV, the former does not affect the transport properties
of the graphene sheet at T=300 K, though it softens the fre-
quency of the A1
KKpoint phonon mode. The latter is
derived from the equation of motion M
2u=dE/du, where E
is the total energy of the graphene sheet per carbon atom. In
the harmonic approximation, E=
u2/2, where
=1.02
104eV/nm2is the effective force constant for the A1
K
Kpoint phonon mode. The electronic contribution to Eat
T=0 K is given by the integral of the band energy of the
valence electrons over the 2D BZ of the graphene sheet.
Formation of the dynamical band gap of width Eglowers the
band energy of the valence
electrons and reduces E.By
approximating the valence
-band dispersion around the K
Kpoint with a cone and integrating it over the 2D BZ of
the graphene sheet, we express the change in Eat T=0 K in
the following form:
E=23a2
16
2
0
2
d
0
kBZ
kdkEvEgEv0兲兴,11
where a factor of 2 stands for the Kand Kpoints, a circle of
radius kBZ =2
1/23−1/4a−1 bounds a half of the 2D BZ,
EvEg=−3t2k2a2
4+Eg
212
is the valence
-band energy when there is a band gap of
magnitude Eggiven by Eq. 10, while Ev0is the case with
no phonon perturbation. Upon performing the integration in
Eq. 11and keeping only the leading term in Eg/t, we obtain
E=− Eg
2
2
1/231/4t.13
The total energy is then given by
E=
1−3q
˜
a
2
2
u2
2,14
where
=−36
2
−1/23−1/4t−1 =2.04104eV/ nm2and q
˜
=qK
q
˜
=qKfor the iTO A1
KKpoint phonon mode. The
phonon frequency is expressed accordingly:
FIG. 3. aThe electronic dispersion relations of an ideal
graphene sheet dashed curvesand the graphene sheet distorted by
the A1
Kpoint phonon mode at T=300 K solid curvescalculated
within the STB black curvesand ETB gray curvesmodels. b
The phonon-dispersion relations of the graphene sheet calculated
within the ETB model Refs. 9and 20at T=0 K gray curvesand
from Eq. 15兲共solid black curves. The dashed black line shows the
leading term in Eq. 15兲共with
set to zero.
SAMSONIDZE et al. PHYSICAL REVIEW B 75, 155420 2007
155420-4
=1
M
1−3q
˜
a
2
2
.15
In the vicinity of the Kpoint, q
˜
a1, the leading term of Eq.
15takes the form
=
M+
M
3q
˜
a
2
,16
taking into account that
. The Kohn anomaly thus ex-
hibits a linear dispersion around the KKpoint.4
The coefficient
in Eq. 14is calculated analytically by
approximating the valence
band with Eq. 12. However,
the valence
band starts to deviate from Eq. 12away from
the KKpoint. The valence
bands also give a nonvan-
ishing contribution to
. By performing the numerical inte-
gration of the ETB valence
␴␲
-band dispersion distorted by
the A1
Kpoint phonon mode over the 2D BZ of the graphene
sheet, we find
=0.23104eV/ nm2. The phonon-dispersion
relations of the graphene sheet calculated within the ETB
model9,20 and those given by Eq. 15are shown in Fig. 3b
by gray and black curves, respectively. The leading term of
Eq. 15兲共with
set to zerois shown in Fig. 3bby a dashed
line.
In a similar fashion, the E2gpoint phonon mode in the
graphene sheet exhibits a Kohn anomaly4driven by the os-
cillations of kFkF
as described by Eq. 9. There is no
simple analytical expression for the dispersion of the dis-
torted valence
band around the KKpoint, analogous to
Eq. 12involving the dynamical band gap. We thus perform
the numerical integration of the ETB valence
␴␲
-band dis-
persion distorted by the E2gpoint phonon mode over the
2D BZ of the graphene sheet. This yields Eand
in the
form of Eqs. 1416with
=1.31104eV/ nm2and
=0.07104eV/ nm2. The Kohn anomaly around the
point is indeed seen in the phonon-dispersion relations of the
graphene sheet calculated elsewhere.4,9,18 Note that the oscil-
lations of kFkF
only lower Edue to the two dimensionality
of reciprocal space. As follows from the ETB numerical cal-
culations, the softening of the E2gpoint phonon mode is
dominated by the valence
-band states away from the K
Kpoint in the 2D BZ of the graphene sheet.
The Kohn anomalies at the and KKpoints in the 2D
BZ of the graphene sheet are governed by the electronic
contribution to the total energy E, which in turn depends on
the doping level. As the Fermi level EFis moved into the
valence or conduction band, the dynamical band gap Egin-
duced by the A1
KKpoint phonon mode has less contri-
bution to E, or in other words,
in Eqs. 1416decreases,
so that the Kohn anomaly at the KKpoint is smeared out.
On the other hand, the oscillations of kFkF
induced by the
E2gpoint phonon mode contribute to Eregardless of EF,so
that the Kohn anomaly at the point is not affected by EF.
Surely, the Kohn anomalies at the and KKpoints are
formed by the valence
-band states away from and close to
the KKpoint in the 2D BZ of the graphene sheet, respec-
tively. This is illustrated in Fig. 4a, where we plot the fre-
quencies of the A1
Kand E2gpoint phonon modes as a
function of the doping level calculated within the ETB
framework. While the former frequency increases with
changing the doping level, the latter stays constant. However,
recent experiments on a graphene sheet show that the fre-
quency of the E2gpoint phonon mode also increases by
changing the doping level.21 This behavior is attributed to
breaking the Born-Oppenheimer approximation.2124 The lat-
ter is implicit in our ETB calculations, and so the frequency
of the E2gpoint phonon mode in Fig. 4ais independent
of the doping level. Once the Born-Oppenheimer approxima-
tion is broken, the electronic contribution to Eand, conse-
quently the frequency of the E2gpoint phonon mode in-
crease by changing the doping level, as shown elsewhere.21
Note that a similar increase in the frequency of the A1
K
point phonon mode shown in Fig. 4ais induced by the
dynamical band gap opening and is not affected by breaking
the Born-Oppenheimer approximation.
The dynamical band gap Eginduced by the A1
KK
point phonon mode in the graphene sheet gives rise to large
anharmonic terms proportional to u3and u4in the total en-
ergy Eof Eq. 14. As shown in Fig. 4b, the frequency of
the A1
KKpoint phonon mode calculated within the ETB
framework has a strong dependence on the amplitude of the
phonon displacements u. In contrast, the frequency of the E2g
point phonon mode is independent of u, according to Fig.
4b, even though the E2gpoint phonon mode undergoes a
Kohn anomaly. The anharmonicity suggests the importance
of the A1
Kpoint phonon mode for thermal expansion and
thermal conductivity in the graphene sheet. A more formal
treatment of vibrational anharmonicity in the graphene sheet
requires calculation of the phonon-phonon scattering matrix
elements, which is beyond the scope of this paper.
In the case of metallic SWNTs, the LO E2gand iTO A1
KKpoint phonon modes open a dynamical band gap or
induce a mini-band-gap oscillation at the KKpoint, ac-
cording to Sec. II, resulting in Kohn anomalies in the
phonon-dispersion relations at the and KKpoints. By
analogy with Eq. 11for the graphene sheet, the variation of
the total energy Eat T=0 Kis obtained by integrating the
valence metallic
subbands:
FIG. 4. The frequencies of the E2gand A1
Kpoint phonon
modes in the graphene sheet calculated within the ETB framework
as functions of adoping level and batomic displacement. The
frequency dependence on adoping and bdisplacement arises
from athe dynamical band gap Egand banharmonicity in the
total energy E, which is in turn attributed to Eg.
ELECTRON-PHONON COUPLING MECHANISM IN TWO-PHYSICAL REVIEW B 75, 155420 2007
155420-5
E=T
4
N2
/T
/T
dkEvEm+EgEvEm兲兴,17
where Tis the length of the translational unit cell, Nis the
number of hexagons in the translational unit cell, Emis the
mini-band-gap, Egis given by Eq. 10, and Evis the same as
Eq. 12. Integration of Eq. 17yields
E=tT
3
Na
F
Em+Eg
t,3
a
2T
+F
Em
t,3
a
2T
,
18
where we define the following function:
F,K=
K
Kx2+2dx
=KK2+2+2
2lnK2+2+K
−lnK2+2K兲兴.19
The mini-band-gap Emin Eq. 18is zero for metallic
armchair SWNTs and is on the order of room temperature
T=300 K for mini-band-gap semiconducting chiral and zig-
zag SWNTs.25 Upon expanding Eqs. 18and 19in a
power series in Eg/tup to the second order for mini-band-
gap semiconducting chiral and zigzag SWNTs, we find that
the total energy is expressed by Eq. 14with different coef-
ficients
and
for each n,mSWNT. For metallic armchair
SWNTs, however, the expansion of Eqs. 18and 19con-
tains a logarithmic term:
E=tT
3
Na
Eg
2
2t2+Eg
2
t2ln Eg
t
.20
The total energy is then given by
E=
63T
2
Nat
1−3q
˜
a
2
2
1−2ln
6
u
t
1−3q
˜
a
2
u2
2,21
where q
˜
=qand q
˜
=qKq
˜
=qKfor the LO E2gand iTO A1
KKpoint phonon modes. Once again, the nonlinearity of
the electronic dispersion away from the KKpoint and the
contribution of the valence nonmetallic
and
subbands to
the total energy influence the numerical coefficients in Eq.
21. The numerical integration of the ETB valence
␴␲
-band
dispersion over the 1D BZ of SWNTs yields
E=
+
1−3q
˜
a
2
2
ln
6
u
t
1−3q
˜
a
2
u2
2,22
where coefficients
and
are different for each n,m
SWNT. The phonon frequency
is not simply expressed by
the second derivative of Eq. 22because of its nonanalytic
dependence on u. A detailed consideration of the lattice dy-
namics yields
=1
M
+
ln 3q
˜
a
2
.23
Taking into account the inequality
, the leading term of
Eq. 23takes the following form:
=
M+1
2
Mln 3q
˜
a
2
.24
The LO E2gand iTO A1
KKpoint phonon modes thus
exhibit a logarithmic divergence6,8,9,26 for metallic armchair
SWNTs, which in turn gives rise to the static Peierls distor-
tions at low T.7On the other hand, the iTO E2gpoint
phonon mode that causes oscillations of kFand kF
or the
band edges along the momentum quantization lines does not
induce Kohn anomalies in metallic armchair SWNTs. We
omit the analytical integration because of the complexity of
the expression for the distorted band structure. However, the
numerical integration of the distorted band structure with the
displaced kFand kF
shows that the total energy of the 1D
system is independent of the distortion, while the total en-
ergy of the 2D system shows a quadratic dependence with
the distortion amplitude. The iTO E2gpoint phonon mode
thus exhibits a Kohn anomaly in the graphene sheet but not
in metallic armchair SWNTs.
The numerical integration of the ETB valence
␴␲
-band
dispersion over the 1D BZ of the 7,7SWNT yields
=0.98104eV/ nm2and
=0.27104eV/ nm2for the LO
E2gpoint phonon mode, while
=0.76104eV/ nm2and
=0.32104eV/ nm2for the iTO A1
KKpoint phonon
mode. The phonon-dispersion relations of the 7,7SWNT
calculated within the ETB model and those given by Eq. 23
with the aforementioned coefficients
and
are shown in
Fig. 5.
IV. SUMMARY
In summary, we analyze the electron-phonon coupling in
a graphene sheet and in metallic SWNTs by combining GT
with a tight-binding approach. While most of the phonon
FIG. 5. The phonon-dispersion relations of the 7, 7SWNT
calculated within the ETB model Refs. 9and 20at T=0 K gray
curvesand from Eq. 24兲共solid black curves. The dashed black
line shows the leading term in Eq. 24兲共with
set to zero.
SAMSONIDZE et al. PHYSICAL REVIEW B 75, 155420 2007
155420-6
modes in the graphene sheet induce oscillations of the Fermi
points in the first BZ, the highest-frequency phonon mode at
the Kpoint opens a dynamical band gap at EF. Both the
Fermi point oscillation and the dynamical band gap opening
give rise to Kohn anomalies in the phonon spectrum of the
graphene sheet, while the dynamical band gap opening also
yields strong anharmonic effects. Similar phenomena take
place in metallic SWNTs, except that both Kohn anomalies
are induced by the dynamical band gaps and not by the
Fermi point oscillations. In metallic armchair SWNTs, the
dynamical band gap results in a logarithmic divergence of
the phonon frequencies and in static Peierls deformations at
low T. The dynamical band gap opening discussed in this
paper is equivalent to the electron-phonon scattering at the
Fermi surface reported in the literature.4,9
ACKNOWLEDGMENTS
G.G.S. and E.B.B. thank A. Jorio and L.G. Cançado for
helpful discussions about the GT of the Kpoint. The MIT
authors acknowledge financial support under NSF Grant No.
DMR 04-05538. E.B.B. acknowledges support from CAPES,
Brazil. R.S. acknowledges a Grant-in-Aid No. 16076201
from the Ministry of Education, Culture, Sports, Science and
Technology, Japan.
APPENDIX: THE CASE OF A GENERAL
PHONON WAVE VECTOR
As the phonon wave vector qvaries from the point to
the KKpoint, the directions of the atomic displacements
uAjand uBjgradually change from those shown in Fig. 2a
to the ones in Fig. 2cThis gradual change is illustrated in
Fig. 6. While Figs. 6aand 6dare, respectively, identical
to Figs. 2aand 2c, Figs. 6band 6ccorrespond to some
intermediate wave vectors along the Kdirection. The direc-
tions of uAjand uBjin Figs. 6band 6care defined by
angles
=qa/2 and
K=qKa/2, given the rotation of uAjand
uBjfrom Fig. 6ato Fig. 6dby angle 2
/3 and the dis-
tance of 4
/3abetween the and Kpoints.
The Hamiltonian of the graphene sheet distorted by the
phonon mode in the vicinity of the point is obtained upon
substituting the atomic displacements uAjand uBjshown in
Fig. 6binto Eq. 2:
HAA =E0+
2u−2
1
2+ cos
3
u
,
HAB =t+2
uexpikxaCC +2u兲兴
+2
t
1
2+ cos
3
u
exp
ikx
aCC
2+2u
cos
ky
3aCC
2
u
.A1
In the vicinity of the point, q4
/3aand thus
.
Also taking into account the inequality uaCC, Eq. A1can
be linearized:
HAA =E03
u,
HAB =t1+2ikxu+2
uexpikxaCC
+2t1+2ikxu
uexp
ikxaCC
2
cos
3kyaCC
2
+2t
kyuexp
ikxaCC
2
sin
3kyaCC
2
.A2
Upon substituting Eq. A2into Eq. 1and setting its deter-
minant to zero, we find the Fermi point near the Kpoint in
the form kFx =kFx and kFy =−4
/3a+kFy, where kFx
and kFy are given by Eq. 9.
In a similar fashion, the 66 Hamiltonian of the
graphene sheet distorted by the phonon mode in the vicinity
of the KKpoint is constructed using the atomic displace-
ments uAjand uBjshown in Fig. 6c. To derive the magni-
tude of the dynamical band gap, it is essential to consider the
66 Hamiltonian at k= 0, by analogy with Eqs. 4and 6.
The 66 Hamiltonian at k= 0 can be linearized with respect
to
K
and uaCC in the same way as Eq. A2. Finally,
we obtain
HAA =HBB =
E0+3
2
Ku00
0E03
Ku0
00
E0+3
2
Ku
,
FIG. 6. The arrows show directions of the atomic displacements
for the highest-frequency optical phonon mode of the graphene
sheet aat the point, balong the Kdirection near the point,
calong the Kdirection near the Kpoint, and dat the Kpoint.
Here, aand dare equivalent to Figs. 2aand c, respectively.
The angles indicated in band care given by
=qa/2 and
K
=qKa/2.
ELECTRON-PHONON COUPLING MECHANISM IN TWO-PHYSICAL REVIEW B 75, 155420 2007
155420-7
HAB =HBA =
t+2
ut
1+3
2
K
ut
1−3
Ku
t
1+3
2
K
ut+2
ut
1+3
2
K
u
t
1−3
Kut
1+3
2
K
ut+2
u
.A3
Upon setting the determinant of the Hamiltonian given by
Eq. A3to zero, we find the magnitude of the dynamical
band gap in the form of Eq. 10.
It should be pointed out that the directions of the atomic
displacements in Figs. 6band 6care rotated by an integer
number of angles
and 2
/3−
K, respectively, when mov-
ing to different unit cells in the graphene sheet. For these unit
cells, the Hamiltonians can be constructed by analogy with
Eqs. A1A3. Upon diagonalizing these Hamiltonians, one
obtains kFkF
and Egthat only differ from Eqs. 9and
10in the second order with respect to u/aCC,
/
, and
K/
, in accordance with the linear-response method.9,16
1M. A. Pimenta, A. Marucci, S. A. Empedocles, M. G. Bawendi,
E. B. Hanlon, A. M. Rao, P. C. Eklund, R. E. Smalley, G.
Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 58, R16016
1998.
2J. Maultzsch, S. Reich, C. Thomsen, H. Requardt, and P. Ordejon,
Phys. Rev. Lett. 92, 075501 2004.
3O. Dubay, G. Kresse, and H. Kuzmany, Phys. Rev. Lett. 88,
235506 2002.
4S. Piscanec, M. Lazzeri, F. Mauri, A. C. Ferrari, and J. Robertson,
Phys. Rev. Lett. 93, 185503 2004.
5M. Tommasini, E. D. Donato, C. Castiglioni, and G. Zerbi, Chem.
Phys. Lett. 414, 166 2005.
6K.-P. Bohnen, R. Heid, H. J. Liu, and C. T. Chan, Phys. Rev. Lett.
93, 245501 2004.
7D. Connétable, G.-M. Rignanese, J.-C. Charlier, and X. Blase,
Phys. Rev. Lett. 94, 015503 2005.
8R. Barnett, E. Demler, and E. Kaxiras, Phys. Rev. B 71, 035429
2005.
9V. N. Popov and P. Lambin, Phys. Rev. B 73, 085407 2006.
10 R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Prop-
erties of Carbon Nanotubes Imperial College Press, London,
1998.
11 We only consider the in-plane optical phonon modes, since the
out-of-plane and acoustic phonon modes are only weakly
coupled to
electrons.
12 C. Mapelli, C. Castiglioni, G. Zerbi, and K. Müllen, Phys. Rev. B
60, 12710 1999.
13 D. Porezag, T. Frauenheim, T. Köhler, G. Seifert, and R.
Kaschner, Phys. Rev. B 51, 12947 1995.
14 J. Jiang, R. Saito, Ge. G. Samsonidze, S. G. Chou, A. Jorio, G.
Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 72, 235408
2005.
15 The phonon modes at the Kpoint are labeled as iTO, LO, LA, and
iTA to identify the branch of the phonon-dispersion relations at
the point from which they arise, even though the transverse
and longitudinal optical and acousticcomponents are com-
pletely mixed at the Kpoint.
16 S. Baroni, S. de Gironcoli, A. D. Corso, and P. Giannozzi, Rev.
Mod. Phys. 73, 515 2001.
17 L. Wirtz and A. Rubio, Solid State Commun. 131, 141 2004.
18 O. Dubay and G. Kresse, Phys. Rev. B 67, 035401 2003.
19 N. Mounet and N. Marzari, Phys. Rev. B 71, 205214 2005.
20 The ETB model systematically overestimates the frequencies of
the in-plane phonon modes by about 11%. The calculated fre-
quencies are thus reduced by a factor of 0.9.
21 S. Pisana, M. Lazzeri, C. Casiraghi, K. S. Novoselov, A. K.
Geim, A. C. Ferrari, and F. Mauri, Nat. Mater. 6, 198 2007.
22 A. H. Castro Neto and F. Guinea, Phys. Rev. B 75, 045404
2007.
23 M. Lazzeri, S. Piscanec, F. Mauri, A. C. Ferrari, and J. Robertson,
Phys. Rev. B 73, 155426 2006.
24 M. Lazzeri and F. Mauri, Phys. Rev. Lett. 97, 266407 2006.
25 A. Kleiner and S. Eggert, Phys. Rev. B 63, 073408 2001.
26 S. Piscanec, M. Lazzeri, J. Robertson, A. C. Ferrari, and F. Mauri,
Phys. Rev. B 75, 035427 2007.
SAMSONIDZE et al. PHYSICAL REVIEW B 75, 155420 2007
155420-8
... On the contrary, the role of electron-phonon (e-ph) interaction in such contexts has been scarce. Historically, the e-ph interaction has been proven to deliver promising discoveries in solids [85][86][87] starting from the inducing superconductivity [88][89][90], transport in threedimensional materials [91], low-dimensional polaronic effects [92][93][94][95][96], Peierls transition [97][98][99][100], charge density wave [101][102][103] formation in solids to the Fermipolarons in ultracold gases [104][105][106][107], topological signatures in novel systems [108][109][110][111] etc. More recently, Bose polaron [112][113][114][115], phonon-induced Floquet topological phases [116,117] and several others have been actively explored. ...
Preprint
Full-text available
We present impelling evidence of topological phase transitions induced by electron-phonon (e-ph) coupling in an α-T3 Haldane-Holstein model that presents smooth tunability between graphene (α = 0) and a dice lattice (α = 1). The e-ph coupling has been incorporated via the Lang-Firsov transformation which adequately captures the polaron physics in the high frequency (anti-adiabatic) regime, and yields an effective Hamiltonian of the system through zero phonon averaging at T = 0. While exploring the signature of the phase transition driven by polaron and its interplay with the parameter α, we identify two regions based on the values of α, namely, the low to intermediate range (0 < α ≤ 0.6) and larger values of α (0.6 < α < 1) where the topological transitions show distinct behaviour. There exists a single critical e-ph coupling strength for the former, below which the system behaves as a topological insulator characterized by edge modes, finite Chern number, and Hall conductivity, with all of them vanishing above this value, and the system undergoes a spectral gap closing transition. Further, the critical coupling strength depends upon α. For the latter case (0.6 < α < 1), the scenario is more interesting where there are two critical values of the e-ph coupling at which trivial-topological-trivial and topological-topological-trivial phase transitions occur for α in the range [0.6 : 1]. Our studies on e-ph coupling induced phase transitions show a significant difference with regard to the well-known unique transition occurring at α = 0.5 (or at 0.7) in the absence of the e-ph coupling, and thus underscore the importance of interaction effects on the topological phase transitions.
... The latter is known to be able to open the gaps in the spin wave spectra [86]. Note that phonon-induced intervalley scattering can lead to a dynamical gap opening at K and K points in the electron spectrum of graphene [87,88]. One can assume that a similar effect can take place in a magnetic honeycomb lattice as well, but this question needs further investigation. ...
Article
Full-text available
It has been predicted theoretically and indirectly confirmed experimentally that single-layer CrX3 (X = Cl, Br, I) might be the prototypes of topological magnetic insulators (TMI). In this work, by using first-principles calculations combined with atomistic spin dynamics, we provide a complete picture of the magnetic interactions and magnetic excitations in CrX3. The focus is here on the two most important aspects for the actual realization of TMI, namely the relativistic magnetic interactions and the finite-size (edge) effects. We compute the full interaction tensor, which includes both Kitaev and Dzyaloshinskii-Moriya (DM) terms, which are considered as the most likely mechanisms for stabilizing topological magnons. First, we instigate the properties of bulk CrI3 and compare the simulated magnon spectrum with the experimental data [Phys. Rev. X 8, 041028 (2018)]. Our results suggest that a large size of topological gap, seen in experiment (≈4 meV), cannot be explained by considering pair-wise spin interactions only. We identify several possible reasons for this disagreement. The magnetic interactions in the monolayers of CrX3 are also investigated. The strength of the anisotropic interactions is shown to scale with the position of halide atom in the periodic table, the heavier the element the larger is the anisotropy, in agreement with prior studies. Comparing the magnons for the bulk and single-layer CrI3, we find that the size of the topological gap becomes smaller in the latter case. The obtained next nearest-neighbor DM vector is oriented primarily in-plane of the monolayer and has relatively small z component, which results in a small value of the topological gap. Finally, we investigate finite-size effects in monolayers and demonstrate that the anisotropic couplings between Cr atoms close to the edges are much stronger than those in ideal periodic structure. This should have impact on the dynamics of the magnon edge modes in Cr halides.
... where ψ = ψ E (0) F is given by Eqs. (28)- (29) in terms of ...
Preprint
Full-text available
In this work, we study the in-plane optical phonon modes of current-carrying single-layer graphene whose coupling to the $\pi$ electron gas is strong. Such modes are expected to undergo a frequency shift compared to the non-current-carrying state due to the non-equilibrium occupation of the Dirac cone electronic eigen-states with the flowing $\pi$ electron gas. Large electron-phonon coupling (EPC) can be identified by an abrupt change in the slope of the phonon mode dispersion known as the Kohn anomaly, which mainly occurs for (i) the in-plane longitudinal/transverse optical (LO/TO) modes at the Brillouin zone (BZ) center ($\Gamma$ point), and (ii) the TO modes at the BZ corners ($K$ points). We show that the breaking of the rotational symmetry by the DC current results in different frequency shifts to the $\Gamma$-TO and $\Gamma$-LO modes. More specifically, the DC current breaks the TO-LO mode degeneracy at the $\Gamma$ point which ideally would be manifested as the splitting of the Raman G peak.
... Introduction.-Since the very beginning of the quantum theory of solids [1,2], the interaction between electrons and lattice vibrations has provided a long list of exciting discoveries and its effects have proven to be ubiquitous in condensed matter physics. Hallmarks of this interaction pervade in three dimensional materials [3], as well as in low dimensional systems [4][5][6][7][8]. Prominent examples include the role played by electron-phonon (e-ph) interaction in the development of the theory of superconductivity [9][10][11] and conducting polymers [12], where charge doping is used to circumvent the Peierls transition [13,14]. ...
Preprint
Full-text available
Unlike the chirality of electrons, the intrinsic chirality of phonons has only surfaced in recent years. Here we report on the effects of the interaction between electrons and chiral phonons in two-dimensional materials using a non-perturbative solution. Chiral phonons introduce inelastic Umklapp processes resulting in copropagating edge states which coexist with a continuum. Their robustness is revealed by our transport simulations. We hope that this might foster the search of new of effects derived from the interaction with chiral phonons and their hybrid electron-phonon states of matter.
... The latter is known to be able to open the gaps in the spin wave spectra [67]. Note that phononinduced intervalley scattering can lead to a dynamical gap opening at K and K' points in the electron spectrum of graphene [68,69]. One can assume that a similar effect can take place in magnetic honeycomb lattice as well, but this question needs further investigation. ...
Preprint
It has been predicted theoretically and indirectly confirmed experimentally that single-layer CrX$_3$ (X=Cl, Br, I) might be the prototypes of topological magnetic insulators (TMI). In this work, by using first-principles calculations combined with atomistic spin dynamics we provide a complete picture of the magnetic interactions and magnetic excitations in CrX$_3$. The focus is here on the two most important aspects for the actual realization of TMI, namely the relativistic magnetic interactions and the finite-size (edge) effects. We compute the full interaction tensor, which includes both Kitaev and Dzyaloshinskii-Moriya terms, which are considered as the most likely mechanisms for stabilizing topological magnons. First, we instigate the properties of bulk CrI$_3$ and compare the simulated magnon spectrum with the experimental data [Phys. Rev. X 8, 041028 (2018)]. Our results suggest that a large size of topological gap, seen in experiment ($\approx$ 4 meV), can not be explained by considering pair-wise spin interactions only. We identify several possible reasons for this disagreement and suggest that a pronounced magneto-elastic coupling should be expected in this class of materials. The magnetic interactions in the monolayers of CrX$_3$ are also investigated. The strength of the anisotropic interactions is shown to scale with the position of halide atom in the Periodic Table, the heavier the element the larger is the anisotropy. Comparing the magnons for the bulk and single-layer CrI$_3$, we find that the size of the topological gap becomes smaller in the latter case. Finally, we investigate finite-size effects in monolayers and demonstrate that the anisotropic couplings between Cr atoms close to the edges are much stronger than those in ideal periodic structure. This should have impact on the dynamics of the magnon edge modes in this class of materials.
... Relatively few 2D materials have had mobilities theoretically investigated up to now. Graphene has been studied extensively 24,40,41,43,44,60,[63][64][65][66][67][68][69][70][71][72][73][74][75] , showing excellent agreement 44 with experiments 1 and a detailed understanding of the main processes limiting mobility 41 , including the effects of dimensionality and charging by field effect 29,75 . MoS 2 , another prototypical 2D material, has also been studied in several works 24,42,43,[52][53][54] , as well as phosphorene [45][46][47][48]76,77 , arsenene [78][79][80] , silicene 24 , and other TMDs 42 . ...
Article
Full-text available
We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar countercharges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. This treatment highlights some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides. We use symmetries extensively and identify pockets of relevant electronic states to minimize the number of electron-phonon interactions to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS2,WS2,WSe2, phosphorene, arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600cm2V−1s−1. Last, we identify the factors that affect most phonon-limited mobilities, such as the number and the anisotropy of electron and hole pockets, to provide a broader understanding of the driving forces behind high mobilities in two-dimensional materials.
... On the other hand, the change in the resonance conditions could occur. In our case, the laser excitation used in Figure 2 and Figure 2. a) Illustration of the vibrational symmetry of G and 2D modes adapted from ref. [25]. b) Raman spectra of pristine single layer graphene, graphite, graphene oxide (GO), and laser-reduced GO. ...
Article
Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G⁻ and some radial breathing modes which suggests that the effects of laser irradiation induce diameter‐selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.
... Graphene has been studied extensively 24,40,41,43,44,[56][57][58][59][60][61][62][63][64][65][66][67][68][69] , showing excellent agreement 44 with experiments 1 and a detailed understanding of the main processes limiting mobility 41 , including the effects of dimensionality and charging by field-effect 29,69 . MoS 2 , another prototypical 2D material, has also been studied in several works 24,42,43,[49][50][51] , as well as phosphorene [45][46][47][48]70,71 , arsenene 72-74 , silicene 24 , and other TMDs 42 . ...
Preprint
Full-text available
We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field-effect via the presence of planar counter-charges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. The framework shows some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides. We use symmetries and define pockets of relevant electronic states to limit the number of phonons to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS 2 , WS 2 , WSe 2 , phosphorene and arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600 cm$^2\cdot$V$^{-1}\cdot$s$^{-1}$. We identify the factors that affect most the phonon-limited mobilities, providing a broader understanding of the driving forces behind high-mobility in two-dimensional materials.
Article
Unlike the chirality of electrons, the intrinsic chirality of phonons has only surfaced in recent years. Here, we report on the effects of the interaction between electrons and chiral phonons in two-dimensional materials by using a nonperturbative solution. We show that chiral phonons introduce inelastic Umklapp processes resulting in copropagating edge states that coexist with a continuum. Transport simulations further reveal the robustness of the edge states. Our results hint on the possibility of having a metal embedded with hybrid electron-phonon states of matter.
Preprint
Full-text available
The layered graphene systems exhibit the rich and unique excitation spectra arising from the electron-electron Coulomb interactions. The generalized tight-binding model is developed to cover the planar/buckled/cylindrical structures, specific lattice symmetries, different layer numbers, distinct configurations, one-three dimensions, complicated intralayer and interlayer hopping integrals, electric field, magnetic quantization; any temperatures and dopings simultaneously. Furthermore, we modify the random-phase approximation to agree with the layer-dependent Coulomb potentials with the Dyson equation, so that these two methods can match with other under various external fields. The electron-hole excitations and plasmon modes are greatly diversified by the above-mentioned critical factors; that is, there exist the diverse (momentum. frequency)-related phase diagrams. They provide very effective deexcitation scatterings and thus dominate the Coulomb decay rates. Graphene, silicene and germanene might quite differ from one another in Coulomb excitations and decays because of the strength of spin-orbital coupling. Part of theoretical predictions have confirmed the experimental measurements, and most of them require the further examinations. Comparisons with the other models are also made in detail.
Article
Full-text available
We show that electron-phonon coupling (EPC) is the major source of broadening for the Raman G and G- peaks in graphite and metallic nanotubes. This allows us to directly measure the optical-phonon EPCs from the G and G- linewidths. The experimental EPCs compare extremely well with those from the density functional theory. We show that the EPC explains the difference in the Raman spectra of metallic and semiconducting nanotubes and their dependence on tube diameter. We dismiss the common assignment of the G- peak in metallic nanotubes to a resonance between phonons and plasmons and we attribute it to a resonance between phonons and electron-hole pairs. For metallic tubes, we assign the G+ and G- peaks to TO (circumferential) and LO (axial) modes, the opposite of what is commonly done in literature.
Article
Full-text available
The anomalous resonant behavior of the tangential Raman modes of carbon nanotubes has been studied in the critical region of laser energies 1.7-2.2 eV. The special enhancement of the Raman modes is explained by a model that takes into account the transition between the singularities in the one-dimensional density of electronic states for the metallic nanotubes and the distribution of diameters in the sample. The results agree with direct measurements of the electronic density of states for the metallic nanotubes and establish their association with the specially enhanced high frequency, first-order Raman modes. @S0163-1829~98!50848-X# Resonant Raman spectroscopy is a very useful tool for the characterization of the one-dimensional ~1D! properties of carbon nanotubes. It has been used to study multiwall nano- tubes ~MWNT!,1 single-wall nanotubes ~SWNT!,2-5 and was recently examined theoretically.6 We show here evidence that special tangential phonon modes of metallic carbon nanotubes are enhanced in a narrow range of laser energies between 1.7 and 2.2 eV by electronic transitions between the first singularities in the 1D electronic density of states ~DOS! in the valence and conduction bands v 1!c 1 . This result establishes the association of the specially enhanced high- frequency, tangential modes with the metallic carbon nano- tubes.
Article
Full-text available
The radial breathing and G-band vibrational modes of all 300 single-walled carbon nanotubes in the radius range from 2 to 12 Å were calculated within a symmetry-adapted nonorthogonal tight-binding model. The dynamical matrix was calculated within this model using the linear-response approximation. The obtained phonon frequencies show well-expressed radius and chirality dependence and family behavior. The curvature-induced effects on the frequencies are found to be important for small- and moderate-radius tubes. The strong electron-phonon interactions in metallic tubes bring about Kohn anomalies of certain phonon branches. Among the Raman-active phonons, these interactions have strongest effect on the longitudinal tangential A1 phonons of metallic tubes, whose frequency becomes lower than that of the transverse tangential A1 phonons. The calculated frequencies are compared to available theoretical and experimental data.
Article
We have developed the electron-phonon matrix element in single-wall carbon nanotubes by using the extended tight-binding model based on density functional theory. We calculate this matrix element to study the electron-phonon coupling for the radial breathing mode (RBM) and the G-band A symmetry modes of single-wall carbon nanotubes. Three well-defined family patterns are found in the RBM, longitudinal optical (LO) mode and transverse optical (TO) mode. We find that among the RBM, LO, and TO modes, the LO mode has the largest electron-phonon interaction. To study the electron-phonon coupling in the transport properties of metallic nanotubes, we calculate the relaxation time and mean free path in armchair tubes. We find that the LO mode, A1′ mode, and one of the E1′ modes give rise to the dominant contributions to the electron inelastic backscattering by phonons. Especially, the off-site deformation potential gives zero matrix elements for E1′ modes while the on-site deformation potential gives rise to nonzero matrix elements for the two E1′ modes, indicating that the on-site deformation potential plays an important role in explaining the experimentally observed Raman mode around 2450 cm−1 in carbon.
Article
We measured the dispersion of the graphite optical phonons in the in-plane Brillouin zone by inelastic x-ray scattering. The longitudinal and transverse optical branches cross along the � -K as well as the � -M direction. The dispersion of the optical phonons was, in general, stronger than expected from the literature. At the K point the transverse optical mode has a minimum and is only � 70 cm � 1 higher in frequency than the longitudinal mode. We show that first-principles calculations describe very well the vibrational properties of graphene once the long-range character of the dynamical matrix is taken into account.
Article
Accurate calculations for the phonon dispersion relations of single-wall armchair and zigzag nanotubes are presented. The calculations are performed using a plane-wave basis set and density functional theory. To ensure the accuracy of the presented calculations, the phonon dispersion relation of an isolated graphite layer is calculated and the results are compared to experiment. Errors are small, but some notable discrepancies between experiment and theory are observed and discussed. For armchair and zigzag nanotubes the dependence of Raman-active and infrared-active modes on the radius is investigated in detail concentrating on the modes in the G band. The results are compared to those predicted by the zone-folding method using the calculated force constants for graphite. We find a general softening of most high-frequency modes and a substantial lowering of one particular longitudinal A1 mode in metallic tubes. We associate this mode with the Breit-Wigner-Fano lines observed usually in metallic tubes. The precise electronic mechanism leading to the softening of the longitudinal A1 mode is discussed in detail.
Article
The structural, dynamical, and thermodynamic properties of diamond, graphite and layered derivatives (graphene, rhombohedral graphite) are computed using a combination of density-functional theory total-energy calculations and density-functional perturbation theory lattice dynamics in the generalized gradient approximation. Overall, very good agreement is found for the structural properties and phonon dispersions, with the exception of the c∕a ratio in graphite and the associated elastic constants and phonon dispersions. Both the C33 elastic constant and the Γ to A phonon dispersions are brought to close agreement with available data once the experimental c∕a is chosen for the calculations. The vibrational free energy and the thermal expansion, the temperature dependence of the elastic moduli and the specific heat are calculated using the quasiharmonic approximation. Graphite shows a distinctive in-plane negative thermal-expansion coefficient that reaches its lowest value around room temperature, in very good agreement with experiments. Thermal contraction in graphene is found to be three times as large; in both cases, bending acoustic modes are shown to be responsible for the contraction, in a direct manifestation of the membrane effect predicted by Lifshitz over 50 years ago. Stacking directly affects the bending modes, explaining the large numerical difference between the thermal-contraction coefficients in graphite and graphene, notwithstanding their common physical origin.
Article
We review calculations and measurements of the phonon dispersion relation of graphite. First-principles calculations using density-functional theory are generally in good agreement with the experimental data since the long-range character of the dynamical matrix is properly taken into account. Calculations with a plane-wave basis demonstrate that for the in-plane optical modes, the generalized-gradient approximation (GGA) yields frequencies lower by 2% than the local-density approximation (LDA) and is thus in better agreement with experiment. The long-range character of the dynamical matrix limits the validity of force-constant approaches that take only interaction with few neighboring atoms into account. However, by fitting the force-constants to the ab initio dispersion relation, we show that the popular 4th-nearest-neighbor force-constant approach yields an excellent fit for the low frequency modes and a moderately good fit (with a maximum deviation of 6%) for the high-frequency modes. If, in addition, the non-diagonal force-constant for the second-nearest neighbor interaction is taken into account, all the qualitative features of the high-frequency dispersion can be reproduced and the maximum deviation reduces to 4%. We present the new parameters as a reliable basis for empirical model calculations of phonons in graphitic nanostructures, in particular carbon nanotubes.
Article
We investigate the effects on the electronic structure induced by a relaxation of the graphite lattice along the direction of the phonons associated to the G and to the D peak characteristic of the Raman spectra of graphitic materials. To this aim the bond length dependence of the hopping integral β is introduced in a Hückel (tight-binding) hamiltonian, giving rise to two different β1 and β2 parameters. A Peierls-like gap opening is found for a relaxation along the D peak phonon and not for the G peak phonon. The electronic density of states is discussed and a link is shown between the electronic structure of benzene and the electronic structure of graphene at the K point in reciprocal space.