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Optical absorption and photoluminescence studies of gold nanoparticles deposited on porous silicon

Nanoscale Research Letters (Impact Factor: 2.52). 01/2013; 8(1):35. DOI: 10.1186/1556-276X-8-35
Source: PubMed

ABSTRACT We present an investigation on a coupled system consists of gold nanoparticles and silicon nanocrystals. Gold nanoparticles (AuNPs) embedded into porous silicon (PSi) were prepared using the electrochemical deposition method. Scanning electron microscope images and energy-dispersive X-ray results indicated that the growth of AuNPs on PSi varies with current density. X-ray diffraction analysis showed the presence of cubic gold phases with crystallite sizes around 40 to 58 nm. Size dependence on the plasmon absorption was studied from nanoparticles with various sizes. Comparison with the reference sample, PSi without AuNP deposition, showed a significant blueshift with decreasing AuNP size which was explained in terms of optical coupling between PSi and AuNPs within the pores featuring localized plasmon resonances.

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    • "Additionaly, the interest to silicon nanostructures containing noble metal nanoparticles was recently found. It was initiated because metal nanoparticles with localized surface plasmon modes demonstrate a specific option to enhance the recombination rate of the light silicon emitter to increase the efficiency of photoluminescence and internal quantum effectively [6] [8]. Silver nanoparticles (AgNPs) are the subject of specific increasing interests due to their strongest plasmon resonance in the visible spectrum [9] [10]. "
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    ABSTRACT: A new nanotechnology approach to create a nanoporous silicon layers by low-energy high-dose metal-ion implantation is demonstrated. Ag-ion implantation into monocrystalline silicone substrate at energy 30 keV with doses from 7.5 × 10 16 to 1.5 × 10 17 ion/cm 2 was carried out. Surface nanoporous structures were studied by scanning electron microscope imaging and energy-dispersive X-ray analysis. For the first time it is shown that nanoporous silicon were formed by Ag-ion implantation. The average sizes of porous holes and thickness of walls between porous are about 110-130 and 30-60 nm, respectively. The formation of silver nanoparticles with average size of 5-10 nm inside porous silicon structures was detected. Thus, ion implantation is suggested to be used for a fabrication of naoporous layer structure, which could be easily combined with the silicon matrix for various applications.
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    • "Additionaly, the interest to silicon nanostructures containing noble metal nanoparticles was recently found. It was initiated because metal nanoparticles with localized surface plasmon modes demonstrate a specific option to enhance the recombination rate of the light silicon emitter to increase the efficiency of photoluminescence and internal quantum effectively [6] [8]. Silver nanoparticles (AgNPs) are the subject of specific increasing interests due to their strongest plasmon resonance in the visible spectrum [9] [10]. "
    [Show abstract] [Hide abstract]
    ABSTRACT: A new nanotechnology approach to create a nanoporous silicon layers by low-energy high-dose metal-ion implantation is demonstrated. Ag-ion implantation into monocrystalline silicone substrate at energy 30 keV with doses from 7.5 × 10 16 to 1.5 × 10 17 ion/cm 2 was carried out. Surface nanoporous structures were studied by scanning electron microscope imaging and energy-dispersive X-ray analysis. For the first time it is shown that nanoporous silicon were formed by Ag-ion implantation. The average sizes of porous holes and thickness of walls between porous are about 110-130 and 30-60 nm, respectively. The formation of silver nanoparticles with average size of 5-10 nm inside porous silicon structures was detected. Thus, ion implantation is suggested to be used for a fabrication of naoporous layer structure, which could be easily combined with the silicon matrix for various applications.
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    ABSTRACT: It is developed and described a new scientific technology for fabrication of nanoporous silicon (PSi) on the surface of monocrystalline Si by metal-ion implantation. For demonstration of an efficiency of the technology an implantation of Ag-ions at energy of 30 keV or Co-ions at energy of 40 keV with dose of 1.5 ∙ 10e17 ion/cm2 into polished Si wafer was realized. Surface PSi structures were analyzed by high-resolution scanning electron microscope and Raman optical spectroscopy. For the first time it is shown that amorphous layers of PSi were formed by Ag-ion or Co-ion implantation. The average sizes of porous holes and thickness of walls between porous are about 110-120 and 30-60 nm, respectively. The formation of Ag nanoparticles with average size of 5-10 nm inside PSi structures was detected opposite to Co nanoparticles.
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