CMOS compatible polarization splitter using hybrid plasmonic waveguide
ABSTRACT We design and experimentally demonstrate an ultrashort integrated polarization splitter on silicon-on-insulator (SOI) platform. Our polarization splitter uses a hybrid plasmonic waveguide as the middle waveguide in a three-core arrangement to achieve large birefringence, allowing only transverse-magnetic (TM) polarized light to directionally couple to the cross port of the directional coupler. Finite-difference time-domain (FDTD) and eigenmode expansive (EME) calculations show that the splitter can achieve an extinction ratio of greater than 15 dB with less than 0.5 dB insertion losses. The polarization splitter was fabricated on SOI platform using standard complementary metal-oxide-semiconductor (CMOS) technology and measured at telecommunications wavelengths. Extinction ratios of 12.3 dB and 13.9 dB for the transverse-electric (TE) and TM polarizations were obtained, together with insertion losses of 2.8 dB and 6.0 dB.
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ABSTRACT: A compact polarization beam splitter (PBS) for silicon-based slot waveguides is proposed, where an asymmetrical multimode waveguide (AMW), cut by a right angle at one corner, is employed to efficiently separate the TE and TM modes. With the unique modal properties of the slot waveguides, the input TE mode almost passes through the AMW and enters into the bar port, while the input TM mode forms a mirror image at the cross port due to the self-imaging effect. Tapered waveguide structures and S-bend are incorporated into the PBS for enhancing the performance. Results show that a PBS with an AMW of 2.3 μm in length is achieved, where the extinction ratios are 16.6 and 20.9 dB, respectively, for TE and TM modes, and the insertion losses are 1.37 and 0.81 dB, respectively, at the wavelength of 1.55 μm, and the bandwidths can cover the entire C-band for both polarizations. In addition, fabrication tolerances to the structural parameters are investigated and field evolution along the propagation distance through the designed PBS is also demonstrated.Journal of Lightwave Technology 12/2014; 32(24). · 2.86 Impact Factor
Optics Express 02/2015; 23(3). DOI:10.1364/OE.23.002487 · 3.53 Impact Factor
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ABSTRACT: Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.Optics Express 02/2015; 23(3):2487-2511. · 3.53 Impact Factor