Article

Electric field mediated switching of mechanical properties of strontium titanate at room temperature

Crystal Research and Technology (Impact Factor: 1.12). 10/2009; 45(1):13 - 17. DOI: 10.1002/crat.200900612

ABSTRACT In situ application of an electric field to a SrTiO3 single crystal plate during nanoindentation led to a reversible change of the mechanical properties at room temperature. When a field of 8 kV/cm was applied, Meyer hardness and Young's modulus decreased by 0.6 GPa and 11 GPa, respectively. An explanation for this behaviour is given by the diffusion of oxygen vacancies resulting in a distortion of the perovskite-type of structure in the near-surface layer tested by nanoindentation. Simulations using density functional theory support the dependence of elasticity on the presence of vacancies. Thus, we can show the remarkable influence of electric fields on oxide materials which should be considered and used in designing future applications. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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    ABSTRACT: Motivated by the successful use of strontium titanate with different doping metals for memory cells on the basis of resistive switching and the recent findings on the major importance of oxygen vacancy redistribution in this compound, the present work shows the possibility of a non-volatile resistance change memory based on vacancy-doped SrTiO3. The formation of corresponding metal/SrTiO3−δ junctions (δ>0) in an electric field will be discussed as well as the switching between ohmic and Schottky-type contact behavior. A notable hysteresis in the current–voltage characteristics is used to carry out Write, Read, and Erase operations exemplifying the memory cell properties of such junctions. But whereas the electric field-induced formation of Schottky-type junctions is explainable by oxygen vacancy redistribution, the resistive switching needs to be discussed in terms of vacancies serving as electron trap states at the metal/oxide interface.
    Applied Physics A 100(2):437-445. · 1.55 Impact Factor